IPP120N20NFDAKSA1

IPP120N20NFDAKSA1
Mfr. #:
IPP120N20NFDAKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 200V 84A TO220-3
Lifecycle:
New from this manufacturer.
Datasheet:
IPP120N20NFDAKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPP120N20NFDAKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
84 A
Rds On - Drain-Source Resistance:
10.6 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
65 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
300 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Tube
Height:
15.65 mm
Length:
10 mm
Series:
OptiMOS Fast Diode
Transistor Type:
1 N-Channel
Width:
4.4 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
70 S
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
10 ns
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
24 ns
Typical Turn-On Delay Time:
13 ns
Part # Aliases:
IPP120N20NFD SP001108122
Unit Weight:
0.211644 oz
Tags
IPP120N, IPP120, IPP12, IPP1, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, N-Channel MOSFET, 84 A, 200 V, 3-Pin TO-220 Infineon IPP120N20NFDAKSA1
***ure Electronics
IPP120N20NFD Series 200 V 84 A OptiMOS™FD Power Transistor MOSFET - TO-220-3
***ical
Trans MOSFET N-CH 200V 84A Automotive 3-Pin(3+Tab) TO-220 Tube
***p One Stop Japan
Trans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube
***et Europe
Trans MOSFET N-CH 200V 84A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 200V 84A TO220
***ronik
N-CH 200V 84A 12mOhm TO-220-3
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.0106Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; No. Of Pins:3Pins Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 84A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0106ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 200V, 84A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:84A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.0106ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
New OptiMOS Fast Diode (FD), Infineons latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. | Summary of Features: Improved hard commutation ruggedness; Optimized hard switching behavior; Industrys lowest R ds(on), Q g and Q rr; RoHS compliant - halogen free | Benefits: Highest system reliability; System cost reduction; Highest efficiency and power density; Easy-to-design products | Target Applications: Telecom; Class D audio amplifier; Motor control for 48-110V systems; Industrial power supplies; DC-AC inverter
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
OptiMOS™ Fast Diode (FD) Power MOSFETs
Infineon OptiMOS™ Fast Diode (FD) devices are Infineon's latest generation N-channel power MOSFETs in 200V and 250V options. These Infineon OptiMOS FD devices feature reduced Qrr, very low on-resistance, and 175ºC operating temperature. These Infineon OptiMOS FD MOSFETs are optimized for body diode hard commutation and ideal for applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control, and DC/AC inverter.Learn More
Part # Mfg. Description Stock Price
IPP120N20NFDAKSA1
DISTI # V99:2348_06377684
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
105
  • 500:$3.0419
  • 100:$3.7930
  • 25:$4.3949
  • 10:$5.1190
  • 1:$6.6099
IPP120N20NFDAKSA1
DISTI # V36:1790_06377684
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
10
  • 500:$3.0419
  • 100:$3.7930
  • 25:$4.3949
  • 10:$5.1190
  • 1:$6.6099
IPP120N20NFDAKSA1
DISTI # IPP120N20NFDAKSA1-ND
Infineon Technologies AGMOSFET N-CH 200V 84A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube
2343In Stock
  • 2500:$3.2068
  • 500:$4.0025
  • 100:$4.7017
  • 25:$5.4252
  • 10:$5.7380
  • 1:$6.3900
IPP120N20NFDAKSA1
DISTI # 32925566
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
1420
  • 5:$2.4548
IPP120N20NFDAKSA1
DISTI # 31005711
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
500
  • 6:$4.2875
IPP120N20NFDAKSA1
DISTI # 30883914
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
105
  • 3:$6.6099
IPP120N20NFDAKSA1
DISTI # 30529872
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
10
  • 3:$6.6099
IPP120N20NFDAKSA1
DISTI # IPP120N20NFDAKSA1
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP120N20NFDAKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 260
  • 5000:$2.3343
  • 2500:$2.3766
  • 1500:$2.4593
  • 1000:$2.5515
  • 500:$2.6471
IPP120N20NFDAKSA1
DISTI # SP001108122
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin TO-220 Tube (Alt: SP001108122)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€2.6200
  • 500:€3.2500
  • 250:€3.6300
  • 100:€3.8200
  • 10:€4.4100
  • 1:€5.7400
IPP120N20NFDAKSA1.
DISTI # 27AC6745
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:84A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0106ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 500:$3.8100
  • 250:$4.2400
  • 100:$4.4700
  • 50:$4.7000
  • 25:$4.9300
  • 10:$5.1600
  • 1:$6.0700
IPP120N20NFDAKSA1
DISTI # 726-IPP120N20NFDAKS1
Infineon Technologies AGMOSFET N-Ch 200V 84A TO220-3
RoHS: Compliant
2574
  • 1:$6.0700
  • 10:$5.1600
  • 100:$4.4700
  • 250:$4.2400
  • 500:$3.8100
  • 1000:$3.2100
  • 2500:$3.0500
IPP120N20NFD
DISTI # 726-IPP120N20NFD
Infineon Technologies AGMOSFET N-Ch 200V 84A TO220-3
RoHS: Compliant
527
  • 1:$6.0700
  • 10:$5.1600
  • 100:$4.4700
  • 250:$4.2400
  • 500:$3.8100
  • 1000:$3.2100
  • 2500:$3.0500
IPP120N20NFDAKSA1
DISTI # 9064422P
Infineon Technologies AGMOSFET N-CHANNEL 200V 84A OPTIMOS TO220, TU746
  • 250:£3.0450
  • 100:£3.2050
  • 50:£3.4550
  • 10:£3.7100
IPP120N20NFDAKSA1
DISTI # 9064422
Infineon Technologies AGMOSFET N-CHANNEL 200V 84A OPTIMOS TO220, PK26
  • 250:£3.0450
  • 100:£3.2050
  • 50:£3.4550
  • 10:£3.7100
  • 2:£4.6700
IPP120N20NFDAKSA1
DISTI # IPP120N20NFDAKSA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,84A,300W,PG-TO220-311
  • 100:$4.2100
  • 10:$4.8500
  • 3:$6.0500
  • 1:$7.0200
IPP120N20NFDAKSA1
DISTI # 2480855
Infineon Technologies AGMOSFET, N-CH, 200V, 84A, TO-220-3
RoHS: Compliant
0
  • 500:$5.7400
  • 250:$6.3900
  • 100:$6.7400
  • 10:$7.7800
  • 1:$9.1500
IPP120N20NFDAKSA1
DISTI # 2480855
Infineon Technologies AGMOSFET, N-CH, 200V, 84A, TO-220-33
  • 500:£2.9700
  • 250:£3.2900
  • 100:£3.4800
  • 10:£4.0200
  • 1:£5.2100
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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of IPP120N20NFDAKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$6.07
$6.07
10
$5.16
$51.60
100
$4.47
$447.00
250
$4.24
$1 060.00
500
$3.81
$1 905.00
1000
$3.21
$3 210.00
2500
$3.05
$7 625.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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