IRFB4227PBF

Mfr. #:: IRFB4227PBF
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFT 200V 65A 26mOhm 70nC Qg
Lifecycle:: New from this manufacturer.
Datasheet:: IRFB4227PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRFB4227PBF Datasheet IRFB4227PBF Datasheet (P4-P6)IRFB4227PBF Datasheet (P7-P8)
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More Information:: IRFB4227PBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 200 V

Id - Continuous Drain Current:: 65 A

Rds On - Drain-Source Resistance:: 24 mOhms

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 70 nC

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 330 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 49 S

Fall Time:: 31 ns

Product Type:: MOSFET

Rise Time:: 20 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 21 ns

Typical Turn-On Delay Time:: 33 ns

Part # Aliases:: SP001565892

Unit Weight:: 0.211644 oz

Tags: IRFB4227P, IRFB4227, IRFB422, IRFB42, IRFB4, IRFB, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IRFB4227PBF Description

***ied Electronics & Automation: MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 19.7 Milliohms;ID 65A;TO-220AB;PD 330W

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB package, TO220-3, RoHS

*** Source Electronics: Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 65A TO-220AB

***ure Electronics: Single N-Channel 200 V 24 mOhm 98 nC HEXFET® Power Mosfet - TO-220-3

***ment14 APAC: MOSFET, N, 200V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):19.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:140mJ; Capacitance Ciss Typ:4600pF; Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Package / Case:TO-220AB; Power Dissipation Pd:190W; Power Dissipation Pd:330W; Pulse Current Idm:260A; Rth:0.45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 65 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 19.7 / Gate-Source Voltage V = 30 / Fall Time ns = 31 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 33 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 330

IRFB4227PBF More Information

200-250V HEXFET® Power MOSFETs: Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRFB4227PBF DISTI # V36:1790_16260937	Infineon Technologies AG	Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1340	5000:$1.1081 2000:$1.1865 1000:$1.1879 500:$1.5861 250:$1.8140 100:$1.9786 10:$2.2415 1:$2.5817
IRFB4227PBF DISTI # V99:2348_16260937	Infineon Technologies AG	Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1000	5000:$1.1081 2000:$1.1865 1000:$1.1879 500:$1.5861 250:$1.8140 100:$1.9786 10:$2.2415 1:$2.5817
IRFB4227PBF DISTI # IRFB4227PBF-ND	Infineon Technologies AG	MOSFET N-CH 200V 65A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	3573In Stock	1000:$1.8641 500:$2.1722 100:$2.6345 10:$3.1680 1:$3.5200
IRFB4227PBF DISTI # 31003125	Infineon Technologies AG	Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1340	1000:$1.1879 500:$1.5861 250:$1.8140 100:$1.9786 10:$2.2415 6:$2.5817
IRFB4227PBF DISTI # 31011342	Infineon Technologies AG	Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1000	1000:$1.1879 500:$1.5861 250:$1.8140 100:$1.9786 10:$2.2415 6:$2.5817
IRFB4227PBF DISTI # 30605433	Infineon Technologies AG	Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	200	8:$3.1375
IRFB4227PBF DISTI # IRFB4227PBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4227PBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 2930	1:$2.4900 10:$2.0900 25:$2.0900 50:$2.0900 100:$1.7900 500:$1.4900 1000:$1.0900
IRFB4227PBF DISTI # SP001565892	Infineon Technologies AG	Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB (Alt: SP001565892) RoHS: Compliant Min Qty: 1	Europe - 550	1:€2.3900 10:€1.9900 25:€1.9900 50:€1.9900 100:€1.6900 500:€1.4900 1000:€1.0900
IRFB4227PBF DISTI # IRFB4227PBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB (Alt: IRFB4227PBF) RoHS: Compliant Min Qty: 1000	Asia - 0
IRFB4227PBF DISTI # 66K6432	Infineon Technologies AG	MOSFET, 200V, 65A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:65A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0197ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,No. of Pins:3Pins RoHS Compliant: Yes	595	1:$2.5800 10:$2.1900 100:$1.9000 500:$1.6200 1000:$1.3600 2500:$1.3000 5000:$1.2500
IRFB4227PBF DISTI # 70017362	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 19.7 Milliohms,ID 65A,TO-220AB,PD 330W RoHS: Compliant	0	1:$3.3780 10:$2.9810 100:$2.5990 500:$2.2520 1000:$1.9870
IRFB4227PBF DISTI # 942-IRFB4227PBF	Infineon Technologies AG	MOSFET MOSFT 200V 65A 26mOhm 70nC Qg RoHS: Compliant	8501	1:$2.8600 10:$2.4300 100:$2.1100 250:$2.0000 500:$1.7900 1000:$1.5100 2000:$1.4400 5000:$1.3800
IRFB4227PBF	Infineon Technologies AG	Single N-Channel 200 V 24 mOhm 98 nC HEXFET Power Mosfet - TO-220-3 RoHS: Compliant	7827Tube	10:$1.6500 100:$1.4600 500:$1.2500
IRFB4227PBF	International Rectifier		86
IRFB4227PBF DISTI # 6504277	Infineon Technologies AG	MOSFET N-CHANNEL 200V 65A TO220AB, EA	644	1:£3.5600 10:£2.0300 25:£1.8700
IRFB4227PBF DISTI # 6504277P	Infineon Technologies AG	MOSFET N-CHANNEL 200V 65A TO220AB, TU	1428	10:£2.0300 25:£1.8700
IRFB4227PBF	International Rectifier	65 A, 200 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	137	107:$2.1830 30:$2.3600 1:$3.5400
IRFB4227PBF DISTI # IRFB4227PBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,200V,65A,190W,TO220AB	284	1:$2.1700 3:$1.9800 10:$1.6100 100:$1.4000
IRFB4227PBF DISTI # IRFB4227PBF	Infineon Technologies AG	N-Ch 200V 65A 330W 0,024R TO220AB RoHS: Compliant	530	10:€1.5000 50:€1.2000 200:€1.1000 500:€1.0600
IRFB4227PBF	International Rectifier	INSTOCK	2725
IRFB4227PBF		INSTOCK	500
IRFB4227PBF DISTI # 1298536	Infineon Technologies AG	MOSFET, N, 200V, TO-220 RoHS: Compliant	3280	1:£2.5100 10:£1.7200 100:£1.6400 250:£1.3400 500:£1.1800
IRFB4227PBF DISTI # XSKDRABV0021426	INF	RoHS: Compliant	50	400:$2.3100
IRFB4227PBF DISTI # XSLY00000000918	INFINEON/IR	TO-220AB RoHS: Compliant	12240	600:$1.1700 12240:$1.0900
IRFB4227PBF DISTI # XSFP00000152679	Infineon Technologies AG	PowerField-EffectTransistor,65AI(D),200V,0.024ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-220AB RoHS: Compliant	9508	100:$3.3000 9508:$3.0000
IRFB4227PBF DISTI # C1S327400128344	Infineon Technologies AG	Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	293	100:$1.8100 50:$2.0500 10:$2.4300 1:$2.8500
IRFB4227PBF DISTI # C1S322000488696	Infineon Technologies AG	MOSFETs RoHS: Compliant	1340	500:$1.5861 250:$1.8140 100:$1.9786 10:$2.2415 1:$2.5817
IRFB4227PBF DISTI # C1S322000599992	Infineon Technologies AG	MOSFETs RoHS: Compliant	200	100:$1.6200 50:$1.8400 10:$2.1800 1:$2.5100
IRFB4227PBF DISTI # 1298536	Infineon Technologies AG	MOSFET, N, 200V, TO-220 RoHS: Compliant	3422	1:$4.5300 10:$3.8500 100:$3.3400 250:$3.1700 500:$2.8400 1000:$2.4000 2000:$2.2800 5000:$2.1900

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Availability

Stock:: Available
On Order:: 1989
Enter Quantity:

Current price of IRFB4227PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$2.85~~; ~~$2.85~~

10: ~~$2.42~~; ~~$24.20~~

100: ~~$2.10~~; ~~$210.00~~

250: ~~$1.99~~; ~~$497.50~~

500: ~~$1.78~~; ~~$890.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRFB4227PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes