IPB019N08N3 G

Mfr. #:: IPB019N08N3 G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: IPB019N08N3 G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IPB019N08N3 G more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-7

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 80 V

Id - Continuous Drain Current:: 180 A

Rds On - Drain-Source Resistance:: 1.6 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 206 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 300 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 103 S

Fall Time:: 33 ns

Product Type:: MOSFET

Rise Time:: 73 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 86 ns

Typical Turn-On Delay Time:: 28 ns

Part # Aliases:: IPB019N08N3GATMA1 IPB19N8N3GXT SP000444110

Unit Weight:: 0.056438 oz

Tags: IPB019N08N3G, IPB019N08N3, IPB019N08, IPB019, IPB01, IPB0, IPB

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IPB019N08N3 G More Information

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IPB019N08N3GATMA1 DISTI # V36:1790_06377108	Infineon Technologies AG	Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$2.9950 500000:$2.9980 100000:$3.2560 10000:$3.7050 1000:$3.7790
IPB019N08N3GATMA1 DISTI # V72:2272_06377108	Infineon Technologies AG	Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	0
IPB019N08N3GATMA1 DISTI # IPB019N08N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V 180A TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	905In Stock	500:$3.8464 100:$4.5184 10:$5.5150 1:$6.1400
IPB019N08N3GATMA1 DISTI # IPB019N08N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 180A TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	905In Stock	500:$3.8464 100:$4.5184 10:$5.5150 1:$6.1400
IPB019N08N3GATMA1 DISTI # IPB019N08N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V 180A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	2000:$2.9920 1000:$3.1495
IPB019N08N3G DISTI # IPB019N08N3 G	Infineon Technologies AG	Trans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R (Alt: IPB019N08N3 G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0
IPB019N08N3GXT DISTI # IPB019N08N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB019N08N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	6000:$2.6900 10000:$2.6900 4000:$2.7900 2000:$2.8900 1000:$2.9900
IPB019N08N3GATMA1 DISTI # SP000444110	Infineon Technologies AG	Trans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R (Alt: SP000444110) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€2.3900 6000:€2.5900 4000:€2.7900 2000:€2.8900 1000:€2.9900
IPB019N08N3GATMA1 DISTI # 60R2644	Infineon Technologies AG	MOSFET, N CHANNEL, 80V, 180A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes	0	500:$3.5900 250:$4.0000 100:$4.2100 50:$4.4300 25:$4.6500 10:$4.8700 1:$5.7300
IPB019N08N3 G DISTI # 726-IPB019N08N3G	Infineon Technologies AG	MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	783	1:$5.6700 10:$4.8200 100:$4.1700 250:$3.9600 500:$3.5500 1000:$3.0000 2000:$2.8500
IPB019N08N3GATMA1 DISTI # 726-IPB019N08N3GATMA	Infineon Technologies AG	MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	0	1:$5.6700 10:$4.8200 100:$4.1700 250:$3.9600 500:$3.5500 1000:$3.0000
IPB019N08N3 G	Infineon Technologies AG		800	266:$6.8700 119:$7.5570 1:$13.7400
IPB019N08N3 G DISTI # TMOSP9482	Infineon Technologies AG	N-CH80V 180A2mOhm TO263-7 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	1000:$2.9500
IPB019N08N3 G DISTI # TMOSP8869	Infineon Technologies AG	N-CH80V 180A1.9mOHM TO263-7 RoHS: Compliant	Stock DE - 25Stock HK - 0Stock US - 0	1000:$2.9500
IPB019N08N3GATMA1 DISTI # 1775520	Infineon Technologies AG	MOSFET, N CH, 180A, 80V, PG-TO263-7	710	100:£3.7800 10:£4.3700 1:£5.6800
IPB019N08N3GATMA1 DISTI # 1775520	Infineon Technologies AG	MOSFET, N CH, 180A, 80V, PG-TO263-7 RoHS: Compliant	54	1000:$4.5200 500:$5.3500 250:$5.9700 100:$6.2800 10:$7.2600 1:$8.5400
IPB019N08N3 G	Infineon Technologies AG	RoHS(ship within 1day)	1000	1:$6.5800 10:$5.6000 50:$4.9400 100:$4.7400 500:$4.6800 1000:$4.5800

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Availability

Stock:: 938
On Order:: 2921
Enter Quantity:

Current price of IPB019N08N3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$5.67~~; ~~$5.67~~

10: ~~$4.82~~; ~~$48.20~~

100: ~~$4.17~~; ~~$417.00~~

250: ~~$3.96~~; ~~$990.00~~

500: ~~$3.55~~; ~~$1 775.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB019N08N3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes