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| PartNumber | IPB019N08N3GATMA1 | IPB019N08N3G | IPB019N08N3GS |
| Description | MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3 | Trans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R (Alt: IPB019N08N3 G) | |
| Manufacturer | Infineon | INFINEON | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-7 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 180 A | - | - |
| Rds On Drain Source Resistance | 1.6 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 206 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 103 S | - | - |
| Fall Time | 33 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 73 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 86 ns | - | - |
| Typical Turn On Delay Time | 28 ns | - | - |
| Part # Aliases | G IPB019N08N3 IPB19N8N3GXT SP000444110 | - | - |
| Unit Weight | 0.056438 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB019N08N3GATMA1 | MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3 | |
| IPB019N08N3GATMA1 | MOSFET N-CH 80V 180A TO263-7 | ||
| IPB019N08N3G | Trans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R (Alt: IPB019N08N3 G) | ||
| IPB019N08N3GS | New and Original |