IS43LR16160H-6BLI-TR

IS43LR16160H-6BLI-TR
Mfr. #:
IS43LR16160H-6BLI-TR
Manufacturer:
ISSI
Description:
DRAM 256M, 1.8V, Mobile DDR, 16Mx16, 166Mhz, 90 ball BGA (8mmx10mm) RoHS, IT, T&R
Lifecycle:
New from this manufacturer.
Datasheet:
IS43LR16160H-6BLI-TR Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IS43LR16160H-6BLI-TR more Information
Product Attribute
Attribute Value
Manufacturer:
ISSI
Product Category:
DRAM
RoHS:
Y
Type:
SDRAM Mobile - DDR
Data Bus Width:
16 bit
Organization:
16 M x 16
Package / Case:
BGA-60
Memory Size:
256 Mbit
Maximum Clock Frequency:
166 MHz
Access Time:
6 ns
Supply Voltage - Max:
1.95 V
Supply Voltage - Min:
1.7 V
Supply Current - Max:
55 mA
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Series:
IS43LR16160H
Packaging:
Reel
Brand:
ISSI
Mounting Style:
SMD/SMT
Product Type:
DRAM
Factory Pack Quantity:
2000
Subcategory:
Memory & Data Storage
Tags
IS43LR16160H, IS43LR161, IS43LR1, IS43LR, IS43L, IS43, IS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Mobile DDR SDRAM
ISSI Mobile DDR SDRAM is organized as 4 banks of 16,777,216 words x 16 bits and uses a double-data-rate architecture to achieve high-speed operation. The Data Input/Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. ISSI Mobile DDR SDRAM offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.
Image Part # Description
IS43LR16160G-6BL-TR

Mfr.#: IS43LR16160G-6BL-TR

OMO.#: OMO-IS43LR16160G-6BL-TR

DRAM 256M, 1.8V, 166Mhz Mobile DDR
IS43LR16160G-6BLI-TR

Mfr.#: IS43LR16160G-6BLI-TR

OMO.#: OMO-IS43LR16160G-6BLI-TR

DRAM 256M, 1.8V, 166Mhz Mobile DDR
IS43LR16160H-6BLI-TR

Mfr.#: IS43LR16160H-6BLI-TR

OMO.#: OMO-IS43LR16160H-6BLI-TR

DRAM 256M, 1.8V, Mobile DDR, 16Mx16, 166Mhz, 90 ball BGA (8mmx10mm) RoHS, IT, T&R
IS43LR16160G-6BLI

Mfr.#: IS43LR16160G-6BLI

OMO.#: OMO-IS43LR16160G-6BLI

DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM
IS43LR16160G-6BL

Mfr.#: IS43LR16160G-6BL

OMO.#: OMO-IS43LR16160G-6BL

DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM
IS43LR16160F-6BLI

Mfr.#: IS43LR16160F-6BLI

OMO.#: OMO-IS43LR16160F-6BLI

DRAM 256M, 1.8V 166Mhz Mobile DDR SDRAM
IS43LR16160F-6BLI-TR

Mfr.#: IS43LR16160F-6BLI-TR

OMO.#: OMO-IS43LR16160F-6BLI-TR-INTEGRATED-SILICON-SOLUTION

DRAM 256M,1.8V,Mobile DDR 16Mx16,166Mhz
IS43LR16160G-6BLI-TR

Mfr.#: IS43LR16160G-6BLI-TR

OMO.#: OMO-IS43LR16160G-6BLI-TR-INTEGRATED-SILICON-SOLUTION

DRAM 256M, 1.8V, 166Mhz Mobile DDR
IS43LR16160G-6BL-TR

Mfr.#: IS43LR16160G-6BL-TR

OMO.#: OMO-IS43LR16160G-6BL-TR-INTEGRATED-SILICON-SOLUTION

DRAM 256M, 1.8V, 166Mhz Mobile DDR
IS43LR16160F-6BLI

Mfr.#: IS43LR16160F-6BLI

OMO.#: OMO-IS43LR16160F-6BLI-INTEGRATED-SILICON-SOLUTION

DRAM 256M, 1.8V 166Mhz Mobile DDR SDRAM
Availability
Stock:
Available
On Order:
1500
Enter Quantity:
Current price of IS43LR16160H-6BLI-TR is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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