CG2H80030D-GP4

CG2H80030D-GP4
Mfr. #:
CG2H80030D-GP4
Manufacturer:
N/A
Description:
RF JFET Transistors GaN HEMT Die DC-8.0GHz, 30 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CG2H80030D-GP4 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN
Gain:
17 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Vgs - Gate-Source Breakdown Voltage:
- 10 V to 2 V
Id - Continuous Drain Current:
0.8 A
Output Power:
6 W
Maximum Drain Gate Voltage:
-
Minimum Operating Temperature:
-
Maximum Operating Temperature:
-
Pd - Power Dissipation:
-
Mounting Style:
SMD/SMT
Package / Case:
Die
Packaging:
Gel Pack
Application:
-
Configuration:
Single
Height:
100 um
Length:
840 um
Operating Frequency:
10 MHz to 18 GHz
Operating Temperature Range:
-
Product:
GaN HEMT
Width:
800 um
Brand:
Wolfspeed / Cree
Gate-Source Cutoff Voltage:
-
Class:
-
Development Kit:
-
Fall Time:
-
NF - Noise Figure:
-
P1dB - Compression Point:
-
Product Type:
RF JFET Transistors
Rds On - Drain-Source Resistance:
2.3 Ohms
Rise Time:
-
Factory Pack Quantity:
10
Subcategory:
Transistors
Typical Turn-Off Delay Time:
-
Vgs th - Gate-Source Threshold Voltage:
- 3 V
Tags
CG2H800, CG2H8, CG2H, CG2
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Gallium Nitride, High Electron Mobility Transistor
***fspeed SCT
Aerospace & Defense, 28 V, 8 GHz, 30W, Die, RoHS
***i-Key
RF MOSFET HEMT 28V DIE
***fspeed
30-W; 8.0-GHz; GaN HEMT Die
***hardson RFPD
RF POWER TRANSISTOR
Part # Mfg. Description Stock Price
CG2H80030D-GP4
DISTI # CG2H80030D-GP4-ND
WolfspeedRF MOSFET HEMT 28V DIE
RoHS: Compliant
Min Qty: 10
Container: Tray
90In Stock
  • 10:$74.9130
CG2H80030D-GP4
DISTI # 941-CG2H80030D
Cree, Inc.RF JFET Transistors GaN HEMT Die DC-8.0GHz, 30 Watt
RoHS: Compliant
50
  • 10:$73.0900
CG2H80030D-GP4
DISTI # CG2H80030D-GP4
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
50
  • 1:$76.8300
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CGH60030D-GP4

Mfr.#: CGH60030D-GP4

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SLF12575T-2R7N7R0-PF

Mfr.#: SLF12575T-2R7N7R0-PF

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Fixed Inductors SMD 2.7uH 7.0amps
PI3302-00-LGIZ

Mfr.#: PI3302-00-LGIZ

OMO.#: OMO-PI3302-00-LGIZ-VICOR

DC DC CONVERTER 5V
Availability
Stock:
50
On Order:
2033
Enter Quantity:
Current price of CG2H80030D-GP4 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
10
$73.09
$730.90
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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