 |  |  | |
| PartNumber | CG2H30070F | CG2H40010F | CG2H30070F-TB2 |
| Description | RF JFET Transistors GaN HEMT DC-2.0GHz, 60 Watt | RF JFET Transistors GaN HEMT DC-8.0GHz, 10 Watt | RF JFET Transistors Test Board without GaN HEMT |
| Manufacturer | Qorvo | Cree, Inc. | Cree, Inc. |
| Product Category | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
| RoHS | Y | Y | N |
| Transistor Type | HEMT | HEMT | HEMT |
| Technology | GaN SiC | GaN | GaN |
| Gain | 22.9 dB | 16.5 dB | 12 dB |
| Id Continuous Drain Current | 28 A | 1.5 A | 12 A |
| Output Power | 1.5 kW | 10 W | 85 W |
| Maximum Drain Gate Voltage | 225 V | - | 28 V |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 150 C | + 150 C |
| Pd Power Dissipation | 758 W | - | - |
| Mounting Style | SMD/SMT | Screw Mount | Screw Mount |
| Package / Case | NI-1230-4 | 440166 | CG2H30070F |
| Packaging | Tray | Tray | Bulk |
| Application | Avionics, IFF Transponders | - | - |
| Configuration | Dual Gate Dual Drain | - | Single |
| Operating Frequency | 1 GHz to 1.1 GHz | DC to 6 GHz | 0.5 GHz to 3 GHz |
| Series | QPD | - | - |
| Brand | Qorvo | Wolfspeed / Cree | Wolfspeed / Cree |
| Development Kit | QPD1025LEVB1 | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
| Factory Pack Quantity | 18 | 250 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 120 V | 120 V |
| Vgs Gate Source Breakdown Voltage | - | - 10 V, 2 V | - 10 V, 2 V |
| Forward Transconductance Min | - | - | - |
| Vgs th Gate Source Threshold Voltage | - | - 2.7 V | - 2.8 V |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
N/A |
CG2H30070F | RF JFET Transistors GaN HEMT DC-2.0GHz, 60 Watt | |
| CG2H40010F | RF JFET Transistors GaN HEMT DC-8.0GHz, 10 Watt | ||
| CG2H40025F | RF JFET Transistors GaN HEMT DC-6.0GHz, 25 Watt | ||
| CG2H80015D-GP4 | RF JFET Transistors GaN HEMT Die DC-8.0GHz, 15 Watt | ||
| CG2H80060D-GP4 | RF JFET Transistors GaN HEMT Die DC-8.0GHz, 60 Watt | ||
| CG2H80030D-GP4 | RF JFET Transistors GaN HEMT Die DC-8.0GHz, 30 Watt | ||
| CG2H40045F | RF JFET Transistors GaN HEMT DC-4.0GHz, 45 Watt | ||
| CG2H30070F-TB2 | RF JFET Transistors Test Board without GaN HEMT | ||
| CG2H40120F | RF JFET Transistors GaN HEMT 28V DC-4.0GHz 120W | ||
| CG2H80120D-GP4 | RF JFET Transistors GaN HEMT Bare Die 28V DC-8.0GHz 120W | ||
| CG2H40045F-TB | RF Development Tools Test Board without GaN HEMT | ||
| CG2H30070F | RF MOSFET HEMT 28V | ||
| CG2H40010F | RF MOSFET HEMT 28V 440166 | ||
| CG2H40025F | RF MOSFET HEMT 28V 440166 | ||
| CG2H40045F-TB | RF EVAL DEV KITS ISM | ||
| CG2H80015D-GP4 | RF DISCRETE | ||
| CG2H40045F | RF MOSFET HEMT 28V 440193 | ||
| CG2H30070F-TB2 | RF EVAL DEV KITS ISM | ||
| CG2H80030D-GP4 | RF MOSFET HEMT 28V DIE | ||
| CG2H80060D-GP4 | RF DISCRETE | ||
| CG2HA | New and Original |