CG2H30070F

Mfr. #:: CG2H30070F
Manufacturer:: N/A
Description:: RF JFET Transistors GaN HEMT DC-2.0GHz, 60 Watt
Lifecycle:: New from this manufacturer.
Datasheet:: CG2H30070F Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: CG2H30070F Datasheet
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More Information:: CG2H30070F more Information

Product Attribute
Attribute Value

Manufacturer:: Qorvo

Product Category:: RF JFET Transistors

RoHS:: Y

Transistor Type:: HEMT

Technology:: GaN SiC

Gain:: 22.9 dB

Id - Continuous Drain Current:: 28 A

Output Power:: 1.5 kW

Maximum Drain Gate Voltage:: 225 V

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 85 C

Pd - Power Dissipation:: 758 W

Mounting Style:: SMD/SMT

Package / Case:: NI-1230-4

Packaging:: Tray

Application:: Avionics, IFF Transponders

Configuration:: Dual Gate Dual Drain

Operating Frequency:: 1 GHz to 1.1 GHz

Series:: QPD

Brand:: Qorvo

Development Kit:: QPD1025LEVB1

Moisture Sensitive:: Yes

Product Type:: RF JFET Transistors

Factory Pack Quantity:: 18

Subcategory:: Transistors

Tags: CG2H, CG2

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CG2H30070F More Information

CG2H40xx & CG2H30xx GaN HEMTs: Wolfspeed / Cree CG2H40xx and CG2H30xx GaN HEMTs are high electron mobility transistors operate from 28V rail. The CG2H40xx and CG2H30xx transistors offer a general purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities of these HEMTs make it ideal for linear and compressed amplifier circuits. The CG2H40xx and CG2H30xx transistors are available in different packages which includes screw down, flange, solder down, pill packages, and 2-lead flange packages. Typical applications include broadband amplifiers, cellular infrastructure, and radar.Learn more

Market price

Part #	Mfg.	Description	Stock	Price
CG2H30070F DISTI # V36:1790_22799847	Cree, Inc.	RF POWER TRANSISTOR	0	50000:$277.4900 25000:$277.5000 5000:$283.4900 500:$300.2000 50:$303.4300
CG2H30070F DISTI # CG2H30070F-ND	Wolfspeed	RF MOSFET HEMT 28V RoHS: Not compliant Min Qty: 1 Container: Tray	16In Stock	1:$286.1900
CG2H30070F-TB2 DISTI # CG2H30070F-TB2-ND	Wolfspeed	RF EVAL DEV KITS ISM RoHS: Not compliant Min Qty: 1 Container: Bulk	On Order	1:$862.5000
CG2H30070F DISTI # 941-CG2H30070F	Cree, Inc.	RF JFET Transistors GaN HEMT DC-2.0GHz, 60 Watt RoHS: Compliant	45	1:$279.2100
CG2H30070F-TB2 DISTI # 941-CG2H30070FTB2	Cree, Inc.	RF JFET Transistors Test Board without GaN HEMT RoHS: Not compliant	0	1:$862.5000
CG2H30070F-TB1 DISTI # 941-CG2H30070F-TB1	Cree, Inc.	RF Development Tools Test Board without GaN HEMT RoHS: Not compliant	0
CG2H30070F DISTI # CG2H30070F	Wolfspeed	RF POWER TRANSISTOR RoHS: Compliant	0	50:$286.1900
CG2H30070F-TB2 DISTI # CG2H30070F-TB2	Wolfspeed	RF TRANSISTOR TEST FIXTURE RoHS: Compliant	0	2:$862.5000

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	Mfr.#: CGHV40100F OMO.#: OMO-CGHV40100F	RF JFET Transistors GaN HEMT DC-4.0GHz, 100 Watt
	Mfr.#: VLMW1301-GS08 OMO.#: OMO-VLMW1301-GS08	Standard LEDs - SMD White 0603 7000K 90mcd
	Mfr.#: CGHV40100F OMO.#: OMO-CGHV40100F-WOLFSPEED	RF JFET Transistors DC-3GHz 100W GaN Gain 17.5dB typ.
	Mfr.#: VLMW1301-GS08 OMO.#: OMO-VLMW1301-GS08-VISHAY-SEMI-OPTO	LED WHITE DIFFUSED 0603 SMD

CG2H30070F

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes