© 2017 Wolfspeed. All rights reserved. The information in this document is subject to change without notice.
wolfspeed.com
Radar Products, CW & Pulsed
GaN HEMT Transistors & MMICs for L, S, C and X-Band Applications
Wolfspeed’s GaN HEMT devices are well suited for pulsed and CW applications. The packaged
discrete GaN HEMT devices are designed for L, S, C and X-Band applications. The GaN HEMT
MMIC 50-ohm amplifiers are designed for L, C, S and X -band applications. Our portfolio oers
a wide range of high eiciency GaN HEMT transistors and aplifiers for pulsed through CW
applications operations at 28 V, 40 V and 50 V
BENEFITS
High reliability
Higher eiciency
Reduction of heat-sink requirements
SiC substrate provides the best thermal performance
FEATURES
GaN-on-SiC technology
Wide-band performance
High power density
High-frequency operation
High breakdown voltage
Product shown :: CGHV35400F
