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CG2H40010F

CG2H40010F
Mfr. #:
CG2H40010F
Manufacturer:
N/A
Description:
RF JFET Transistors GaN HEMT DC-8.0GHz, 10 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CG2H40010F Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CG2H40010F more Information
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN
Gain:
16.5 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
120 V
Vgs - Gate-Source Breakdown Voltage:
- 10 V, 2 V
Id - Continuous Drain Current:
1.5 A
Output Power:
10 W
Maximum Drain Gate Voltage:
-
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
-
Mounting Style:
Screw Mount
Package / Case:
440166
Packaging:
Tray
Operating Frequency:
DC to 6 GHz
Brand:
Wolfspeed / Cree
Forward Transconductance - Min:
-
Product Type:
RF JFET Transistors
Factory Pack Quantity:
250
Subcategory:
Transistors
Vgs th - Gate-Source Threshold Voltage:
- 2.7 V
Tags
CG2H400, CG2H4, CG2H, CG2
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CG2H40xx & CG2H30xx GaN HEMTs
Wolfspeed / Cree CG2H40xx and CG2H30xx GaN HEMTs are high electron mobility transistors operate from 28V rail. The CG2H40xx and CG2H30xx transistors offer a general purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities of these HEMTs make it ideal for linear and compressed amplifier circuits. The CG2H40xx and CG2H30xx transistors are available in different packages which includes screw down, flange, solder down, pill packages, and 2-lead flange packages. Typical applications include broadband amplifiers, cellular infrastructure, and radar.Learn more
Part # Mfg. Description Stock Price
CG2H40010F
DISTI # V36:1790_22404192		Cree, Inc.RF POWER TRANSISTOR0
  • 125000:$57.8500
  • 25000:$58.6800
  • 2500:$60.4200
  • 250:$60.7300
CG2H40010F
DISTI # CG2H40010F-ND		WolfspeedRF MOSFET HEMT 28V 440166
RoHS: Compliant
Min Qty: 1
Container: Tray		77In Stock
  • 1:$49.8000
CG2H40010F
DISTI # 941-CG2H40010F		Cree, Inc.RF JFET Transistors GaN HEMT DC-8.0GHz, 10 Watt
RoHS: Compliant		377
  • 1:$55.8800
CG2H40010F
DISTI # CG2H40010F		WolfspeedRF POWER TRANSISTOR
RoHS: Compliant		138
  • 1:$50.9100
CG2H40010F-TB
DISTI # CG2H40010F-TB		WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant		2
  • 1:$632.5000
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Availability
Stock:
377
On Order:
2360
Enter Quantity:
Current price of CG2H40010F is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$55.88
$55.88
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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