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CGH40006S

CGH40006S
Mfr. #:
CGH40006S
Manufacturer:
N/A
Description:
RF JFET Transistors GaN HEMT DC-6.0GHz, 6 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CGH40006S Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CGH40006S more Information
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN
Gain:
13 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
120 V
Vgs - Gate-Source Breakdown Voltage:
- 10 V to 2 V
Id - Continuous Drain Current:
0.75 A
Output Power:
6.9 W
Maximum Drain Gate Voltage:
-
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
-
Mounting Style:
SMD/SMT
Package / Case:
QFN-6
Packaging:
Reel
Application:
-
Configuration:
Single
Height:
1 mm
Length:
3.15 mm
Operating Frequency:
2 GHz to 6 GHz
Operating Temperature Range:
-
Product:
GaN HEMT
Width:
3.15 mm
Brand:
Wolfspeed / Cree
Forward Transconductance - Min:
-
Gate-Source Cutoff Voltage:
-
Class:
-
Development Kit:
CGH40006S-KIT
Fall Time:
-
Moisture Sensitive:
Yes
NF - Noise Figure:
-
P1dB - Compression Point:
-
Product Type:
RF JFET Transistors
Rds On - Drain-Source Resistance:
-
Rise Time:
-
Factory Pack Quantity:
200
Subcategory:
Transistors
Typical Turn-Off Delay Time:
-
Vgs th - Gate-Source Threshold Voltage:
- 3 V
Tags
CGH4000, CGH400, CGH40, CGH4, CGH
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***o-Tech
- 6W, RF Power GaN HEMT Plastic QFN Package
***i-Key
RF MOSFET HEMT 28V 6QFN
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Part # Mfg. Description Stock Price
CGH40006S
DISTI # CGH40006SCT-ND		WolfspeedRF MOSFET HEMT 28V 6QFN-EP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2987In Stock
  • 100:$32.4612
  • 1:$33.0500
CGH40006S
DISTI # CGH40006SDKR-ND		WolfspeedRF MOSFET HEMT 28V 6QFN-EP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2987In Stock
  • 100:$32.4612
  • 1:$33.0500
CGH40006S
DISTI # CGH40006STR-ND		WolfspeedRF MOSFET HEMT 28V 6QFN-EP
RoHS: Compliant
Min Qty: 200
Container: Tape & Reel (TR)		2800In Stock
  • 200:$29.5101
CGH40006S-KIT
DISTI # CGH40006S-KIT-ND		WolfspeedFET RF HEMT 28V 100MA 440203
RoHS: Compliant
Min Qty: 1
Container: Box		2In Stock
  • 1:$597.9000
CGH40006S
DISTI # 941-CGH40006S		Cree, Inc.RF JFET Transistors GaN HEMT DC-6.0GHz, 6 Watt
RoHS: Compliant		575
  • 1:$29.5100
CGH40006S-KIT
DISTI # 941-CGH40006S-KIT		Cree, Inc.RF Development Tools GaN HEMT Kit DC-6GHz 28V, 6 Watt
RoHS: Compliant		2
  • 1:$550.0000
CGH40006S
DISTI # CGH40006S		WolfspeedRF POWER TRANSISTOR
RoHS: Compliant		197
  • 1:$29.5100
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Availability
Stock:
676
On Order:
2659
Enter Quantity:
Current price of CGH40006S is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$27.48
$27.48
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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