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CGH4000

CGH40006S vs CGH40006P vs CGH40006P-TB

 
PartNumberCGH40006SCGH40006PCGH40006P-TB
DescriptionRF JFET Transistors GaN HEMT DC-6.0GHz, 6 WattRF JFET Transistors GaN HEMT DC-6.0GHz, 6 WattBOARD DEMO AMP CIRCUIT CGH40006P
ManufacturerCree, Inc.Cree, Inc.-
Product CategoryRF JFET TransistorsRF JFET Transistors-
RoHSYY-
Transistor TypeHEMTHEMT-
TechnologyGaNGaN-
Gain13 dB13 dB-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage120 V120 V-
Vgs Gate Source Breakdown Voltage- 10 V to 2 V- 10 V to 2 V-
Id Continuous Drain Current0.75 A0.75 A-
Output Power6.9 W9 W-
Maximum Drain Gate Voltage---
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation---
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseQFN-6440109-
PackagingReelTray-
Application---
ConfigurationSingleSingle-
Height1 mm2.79 mm-
Length3.15 mm4.19 mm-
Operating Frequency2 GHz to 6 GHz2 GHz to 6 GHz-
Operating Temperature Range---
ProductGaN HEMTGaN HEMT-
Width3.15 mm5.21 mm-
BrandWolfspeed / CreeWolfspeed / Cree-
Forward Transconductance Min---
Gate Source Cutoff Voltage---
Class---
Development KitCGH40006S-KITCGH40006P-TB-
Fall Time---
Moisture SensitiveYes--
NF Noise Figure---
P1dB Compression Point---
Product TypeRF JFET TransistorsRF JFET Transistors-
Rds On Drain Source Resistance---
Rise Time---
Factory Pack Quantity200250-
SubcategoryTransistorsTransistors-
Typical Turn Off Delay Time---
Vgs th Gate Source Threshold Voltage- 3 V- 3 V-
Manufacturer Part # Description RFQ
N/A
N/A 		CGH40006S RF JFET Transistors GaN HEMT DC-6.0GHz, 6 Watt
CGH40006P RF JFET Transistors GaN HEMT DC-6.0GHz, 6 Watt
CGH40006P-TB BOARD DEMO AMP CIRCUIT CGH40006P
CGH40006S-KIT FET RF HEMT 28V 100MA 440203
CGH40006S RF JFET Transistors DC-6GHz 28V 6W Gain 11.8dB GaN HEMT
CGH40006P RF JFET Transistors DC-6GHz 28V 6W Gain 13dB GaN HEMT
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