CG2H400 stock, CG2H400, CG2H40010F


PartNumber	CG2H40010F	CG2H40025F	CG2H40045F
Description	RF JFET Transistors GaN HEMT DC-8.0GHz, 10 Watt	RF JFET Transistors GaN HEMT DC-6.0GHz, 25 Watt	RF JFET Transistors GaN HEMT DC-4.0GHz, 45 Watt
Manufacturer	Cree, Inc.	Cree, Inc.	Cree, Inc.
Product Category	RF JFET Transistors	RF JFET Transistors	RF JFET Transistors
RoHS	Y	Y	Y
Transistor Type	HEMT	HEMT	HEMT
Technology	GaN	GaN	GaN
Gain	16.5 dB	15 dB	16 dB
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	120 V	120 V	120 V
Vgs Gate Source Breakdown Voltage	- 10 V, 2 V	- 10 V, 2 V	- 10 V, 2 V
Id Continuous Drain Current	1.5 A	3 A	6 A
Output Power	10 W	25 W	45 W
Maximum Drain Gate Voltage	-	-	-
Minimum Operating Temperature	- 40 C	- 40 C	- 40 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	-	-	-
Mounting Style	Screw Mount	Screw Mount	Screw Mount
Package / Case	440166	440166	440193
Packaging	Tray	Tray	Tray
Operating Frequency	DC to 6 GHz	DC to 6 GHz	DC to 4 GHz
Brand	Wolfspeed / Cree	Wolfspeed / Cree	Wolfspeed / Cree
Forward Transconductance Min	-	-	-
Product Type	RF JFET Transistors	RF JFET Transistors	RF JFET Transistors
Factory Pack Quantity	250	250	120
Subcategory	Transistors	Transistors	Transistors
Vgs th Gate Source Threshold Voltage	- 2.7 V	- 3.8 V	- 3.8 V
Development Kit	-	-	CG2H40045F-TB

Search Part Number : "CG2H400", Match & Start with "CG2H400" - Total : 8

Manufacturer	Part #	Description
N/A	CG2H40010F	RF JFET Transistors GaN HEMT DC-8.0GHz, 10 Watt
	CG2H40025F	RF JFET Transistors GaN HEMT DC-6.0GHz, 25 Watt
	CG2H40045F	RF JFET Transistors GaN HEMT DC-4.0GHz, 45 Watt
	CG2H40045F-TB	RF Development Tools Test Board without GaN HEMT
	CG2H40010F	RF MOSFET HEMT 28V 440166
	CG2H40025F	RF MOSFET HEMT 28V 440166
	CG2H40045F-TB	RF EVAL DEV KITS ISM
	CG2H40045F	RF MOSFET HEMT 28V 440193

CG2H400