FD900R12IP4DBOSA1

FD900R12IP4DBOSA1
Mfr. #:
FD900R12IP4DBOSA1
Manufacturer:
Infineon Technologies
Description:
IGBT MODULE VCES 1200V 900A
Lifecycle:
New from this manufacturer.
Datasheet:
FD900R12IP4DBOSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
FD900R, FD900, FD90, FD9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***ineon SCT
1200 V PrimePACK™2 chopper IGBT module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and NTC, AG-PRIME2-1-10, RoHS
***ment14 APAC
IGBT, HIG POW, 1200V, 900A; Module Configuration:Single; Transistor Polarity:N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:5.1kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:10; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:5.1kW
***ineon
1200V PrimePACK2 chopper IGBT module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and NTC. | Summary of Features: Extended Operation Temperature T(tvj op); High DC Stability; High Short Circuit Capability, Self Limiting Short Circuit Current; V(cesat) with positive Temperature Coefficient; Low V(cesat); 4kV AC 1min Insulation; Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; Substrate for Low Thermal Resistance | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; solar; cav; ups
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***ark
0.5A,50V,50Ns,uf Surperect,melf Rohs Compliant: Yes
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Part # Mfg. Description Stock Price
FD900R12IP4DBOSA1
DISTI # FD900R12IP4DBOSA1-ND
Infineon Technologies AGIGBT MODULE VCES 1200V 900A
RoHS: Not compliant
Min Qty: 3
Container: Bulk
Temporarily Out of Stock
  • 3:$454.8267
FD900R12IP4DBOSA1
DISTI # FD900R12IP4DBOSA1
Infineon Technologies AGINDUSTRY - Trays (Alt: FD900R12IP4DBOSA1)
RoHS: Compliant
Min Qty: 3
Container: Tray
Americas - 3
  • 30:$411.9900
  • 15:$422.0900
  • 9:$432.7900
  • 6:$444.0900
  • 3:$449.8900
FD900R12IP4D
DISTI # 641-FD900R12IP4D
Infineon Technologies AGIGBT Modules IGBT 1200V 900A0
  • 1:$461.7000
  • 5:$433.8700
Image Part # Description
FD900R12IP4D

Mfr.#: FD900R12IP4D

OMO.#: OMO-FD900R12IP4D

IGBT Modules IGBT 1200V 900A
FD900R12IP4DV

Mfr.#: FD900R12IP4DV

OMO.#: OMO-FD900R12IP4DV

IGBT Modules
FD900R12IP4D

Mfr.#: FD900R12IP4D

OMO.#: OMO-FD900R12IP4D-125

IGBT Modules IGBT 1200V 900A
FD900R12IP4DBOSA1

Mfr.#: FD900R12IP4DBOSA1

OMO.#: OMO-FD900R12IP4DBOSA1-INFINEON-TECHNOLOGIES

IGBT MODULE VCES 1200V 900A
FD900R12IP4DV

Mfr.#: FD900R12IP4DV

OMO.#: OMO-FD900R12IP4DV-1190

IGBT Modules
FD900R12IP4DVBOSA1

Mfr.#: FD900R12IP4DVBOSA1

OMO.#: OMO-FD900R12IP4DVBOSA1-INFINEON-TECHNOLOGIES

IGBT MODULE VCES 1200V 900A
Availability
Stock:
Available
On Order:
4000
Enter Quantity:
Current price of FD900R12IP4DBOSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$617.98
$617.98
10
$587.09
$5 870.86
100
$556.19
$55 618.65
500
$525.29
$262 643.65
1000
$494.39
$494 388.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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