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NESG2021M16-T3-A

NESG2021M16-T3-A
Mfr. #:
NESG2021M16-T3-A
Manufacturer:
Rochester Electronics, LLC
Description:
- Bulk (Alt: NESG2021M16-T3-A)
Lifecycle:
New from this manufacturer.
Datasheet:
NESG2021M16-T3-A Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
NESG202, NESG20, NESG2, NESG, NES
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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RF TRANSISTOR, NPN, 4.5V, 30GHZ, TSFP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4.5V; Transition Frequency ft: 30GHz; Power Dissipation Pd: 250mW; DC Collector Current: 80mA; DC Current Gain hFE: 50hFE; RF Transistor Case: TSFP; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
NPN Silicon RF Transistor for ESD protected high gain low noise amplifier | Summary of Features: Excellent ESD performance typical value 1000 V (HBM) Outstanding Gms = 20 dB Noise Figure F = 0.9 dB; SIEGET 45 - Line; Pb-free (ROHS compliant) package; Qualification report according to AEC-Q101 available; * Short term description | Target Applications: Wireless Communications; For amplifier and oscillator applications in RF Front-end
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RF TRANSISTOR, NPN, 4.5V, 25GHZ, TSFP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4.5V; Transition Frequency ft: 25GHz; Power Dissipation Pd: 210mW; DC Collector Current: 60mA; DC Current Gain hFE: 60hFE; RF Transistor Case: TSFP; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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Low Noise Silicon Bipolar RF Transistor | Summary of Features: Low noise high gain silicon bipolar RF transistor; Based on Infineons reliable very high volume 25 GHz silicon bipolar technology; 0.9 dB minimum noise figure typical at 900 MHz, 3 V, 4 mA; 16 dB maximum gain (Gma) typical at 2.4 GHz, 3 V, 15 mA; 28 dBm OIP3 typical at 2.4 GHz, 4 V, 40 mA; 16.5 dBm OP1dB typical at 2.4 GHz, 4 V, 40 mA; Popular in discrete oscillators; Thin, small, flat, Pb-free (RoHS compliant) and Hal-free; (green) package with visible leads | Target Applications: As Low Noise Amplifier (LNA) in; Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB); Multimedia applications such as mobile/portable TV, CATV, FM Radio; ISM applications like RKE, AMR and Zigbee; As discrete active mixer in RF Frontends; As active device in discretes oscillators
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***ineon
Summary of Features: High gain ultra low noise RF transistor; Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more; Ideal for CDMA and WLAN applications; Outstanding noise figure F = 0.5 dB at 1.8 GHz, Outstanding noise figure F = 0.75 dB at 6 GHz; High maximum stable gain :Gms = 27.5 dB at 1.8 GHz; Gold metallization for extra high reliability; 150 GHz fT-Silicon Germanium technology; Pb-free (RoHS compliant) package1); Qualified according AEC Q101
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Part # Mfg. Description Stock Price
NESG2021M16-T3-A
DISTI # NESG2021M16-T3-A		Renesas Electronics Corporation- Bulk (Alt: NESG2021M16-T3-A)
Min Qty: 863
Container: Bulk		Americas - 0
  • 8630:$0.3619
  • 4315:$0.3849
  • 2589:$0.3999
  • 1726:$0.4159
  • 863:$0.4319
NESG2021M16-T3-A
DISTI # 551-NESG2021M16-T3-A		California Eastern Laboratories (CEL)RF Bipolar Transistors NPN High Frequency
RoHS: Compliant		0
    NESG2021M16-T3-ARenesas Electronics CorporationRF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN
    RoHS: Compliant    		20000
    • 1000:$0.3800
    • 500:$0.4000
    • 100:$0.4200
    • 25:$0.4400
    • 1:$0.4700
    Image Part # Description
    NESG2021M05-EVNF58

    Mfr.#: NESG2021M05-EVNF58

    OMO.#: OMO-NESG2021M05-EVNF58

    		 RF Bipolar Transistors For NESG2021M05-A Noise Fig at 5.8 GHz
    NESG2021M05-EVNF58

    Mfr.#: NESG2021M05-EVNF58

    OMO.#: OMO-NESG2021M05-EVNF58-CEL

    		 RF Bipolar Transistors For NESG2021M05-A Noise Fig at 5.8 GHz
    NESG2021M16-A

    Mfr.#: NESG2021M16-A

    OMO.#: OMO-NESG2021M16-A-317

    		 RF Bipolar Transistors NPN High Frequency
    NESG2021M05

    Mfr.#: NESG2021M05

    OMO.#: OMO-NESG2021M05-1152

    		 RF Bipolar Transistors
    NESG2021M05-T1

    Mfr.#: NESG2021M05-T1

    OMO.#: OMO-NESG2021M05-T1-1190

    		 New and Original
    NESG2021M05-T1-A

    Mfr.#: NESG2021M05-T1-A

    OMO.#: OMO-NESG2021M05-T1-A-1190

    		 New and Original
    NESG2021M05-T1-A , EM632

    Mfr.#: NESG2021M05-T1-A , EM632

    OMO.#: OMO-NESG2021M05-T1-A-EM632-1190

    		 New and Original
    NESG2021M16-T3-A

    Mfr.#: NESG2021M16-T3-A

    OMO.#: OMO-NESG2021M16-T3-A-1190

    		 - Bulk (Alt: NESG2021M16-T3-A)
    Availability
    Stock:
    Available
    On Order:
    4500
    Enter Quantity:
    Current price of NESG2021M16-T3-A is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.54
    $0.54
    10
    $0.52
    $5.16
    100
    $0.49
    $48.86
    500
    $0.46
    $230.70
    1000
    $0.43
    $434.30
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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