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APT13005T-G1

APT13005T-G1
Mfr. #:
APT13005T-G1
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A
Lifecycle:
New from this manufacturer.
Datasheet:
APT13005T-G1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT13005T-G1 DatasheetAPT13005T-G1 Datasheet (P4-P6)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Diodes Incorporated
Product Category:
Bipolar Transistors - BJT
RoHS:
Y
Mounting Style:
Through Hole
Package / Case:
TO-220AB-3
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
450 V
Emitter- Base Voltage VEBO:
9 V
Collector-Emitter Saturation Voltage:
300 mV
Maximum DC Collector Current:
8 A
Gain Bandwidth Product fT:
4 MHz
Minimum Operating Temperature:
- 65 C
Maximum Operating Temperature:
+ 150 C
Series:
APT1300
DC Current Gain hFE Max:
35 at 1 A, 5 V
Packaging:
Tube
Brand:
Diodes Incorporated
Continuous Collector Current:
4 A
DC Collector/Base Gain hfe Min:
15
Pd - Power Dissipation:
75 W
Product Type:
BJTs - Bipolar Transistors
Factory Pack Quantity:
1000
Subcategory:
Transistors
Unit Weight:
0.063493 oz
Tags
APT13005, APT130, APT13, APT1, APT
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
450V 4A NPN Power Transistor TO220AB | Diodes Inc APT13005T-G1
***et
Trans GP BJT NPN 700V 4A 3-Pin TO-220AB Tube
***i-Key
TRANS NPN 450V 4A TO220AB
***des Inc SCT
NPN, 700V, 4A, TO220AB, 75W
***emi
4.0 A, 400 V NPN Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***(Formerly Allied Electronics)
Transistor, Bipolar,Si,NPN,Power,VCEO 700VDC,IC 4A,PD 2W,TO-220AB,hFE 40,fT 4MHz | ON Semiconductor MJE13005G
***ical
Trans GP BJT NPN 400V 4A 3-Pin(3+Tab) TO-220AB Rail
***ark
RF Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:400V; Package/Case:3-TO-220; Power Dissipation, Pd:2W; DC Current Gain Min (hfe):8; Frequency Min:75MHz; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***th Star Micro
These devices are designed for high-voltage high-speed power switc inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators Inverters Motor Controls Solenoid/Relay drivers and Deflection circuits.
***nell
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 2W; DC Collector Current: 4A; DC Current Gain hFE: 4hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Application Code: PHVS; Av Current Ic: 4A; Collector Emitter Saturation Voltage Vce(on): 6V; Continuous Collector Current Ic Max: 4A; Current Ic @ Vce Sat: 3A; Current Ic Continuous a Max: 4A; Current Ic hFE: 2mA; Fall Time @ Ic: 0.9µs; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 4MHz; Gain Bandwidth ft Typ: 4MHz; Hfe Min: 8; No. of Transistors: 1; Operating Temperature Min: -65°C; Power Dissipation Ptot Max: 60W; Voltage Vcbo: 700V
***-Wing Technology
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 30 @ 300mA 10V 1A 2W 10MHz
***hine Compare
Bipolar Junction Transistor (BJT) NPN 400V 1A 10MHz 2W TO-220AB
***emi
1.0 A, 400 V NPN Bipolar Power Transistor
***ment14 APAC
Transistor, NPN, 400V, TO-220; Transisto; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition
***ark
Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:400V; Transition Frequency Typ, ft:10MHz; Power Dissipation, Pd:2000mW; DC Collector Current:1A; DC Current Gain Max (hfe):30; No. of Pins:3 ;RoHS Compliant: Yes
***ical
Trans GP BJT PNP 80V 4A 30000mW 3-Pin(3+Tab) TO-220AB Tube
***emi
Power Bipolar Transistor, PNP, 4.0 A, 80 V
***r Electronics
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***ment14 APAC
TRANSISTOR, RF; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:40MHz; Power Dissipation Pd:30W; DC Collector Current:4A; DC Current Gain hFE:120; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Current Ic Continuous a Max:4A; Gain Bandwidth ft Typ:40MHz; Hfe Min:20; Package / Case:TO-220AB; Power Dissipation Pd:30W; Termination Type:Through Hole
Part # Mfg. Description Stock Price
APT13005T-G1
DISTI # V36:1790_06690845		Zetex / Diodes Inc450V NPN High Voltage Power Transistor
RoHS: Compliant		0
  • 1000000:$0.2303
  • 500000:$0.2306
  • 100000:$0.2546
  • 10000:$0.2969
  • 1000:$0.3040
APT13005T-G1
DISTI # APT13005T-G1DI-ND		Diodes IncorporatedTRANS NPN 450V 4A TO220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$0.3040
APT13005T-G1
DISTI # APT13005T-G1		Diodes IncorporatedTrans GP BJT NPN 700V 4A 3-Pin TO-220AB Tube (Alt: APT13005T-G1)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€0.2039
  • 500:€0.2069
  • 100:€0.2099
  • 50:€0.2129
  • 25:€0.2159
  • 10:€0.2199
  • 1:€0.2309
APT13005T-G1
DISTI # APT13005T-G1		Diodes IncorporatedTrans GP BJT NPN 700V 4A 3-Pin TO-220AB Tube - Rail/Tube (Alt: APT13005T-G1)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.1939
  • 6000:$0.1979
  • 4000:$0.2079
  • 2000:$0.2179
  • 1000:$0.2289
APT13005T-G1
DISTI # 70550933		Diodes Incorporated450V 4A NPN Power Transistor TO220AB
RoHS: Compliant		0
  • 125:$0.4070
  • 250:$0.3630
  • 625:$0.3010
  • 1250:$0.2920
APT13005T-G1
DISTI # 621-APT13005T-G1		Diodes IncorporatedBipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A
RoHS: Compliant		920
  • 1:$0.7100
  • 10:$0.5890
  • 100:$0.3800
  • 1000:$0.3040
APT13005T-G1
DISTI # 8283335P		Zetex / Diodes Inc450V 4A NPN POWER TRANSISTOR TO220AB, TU350
  • 1250:£0.2700
  • 625:£0.2950
  • 250:£0.3060
  • 125:£0.3190
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Availability
Stock:
920
On Order:
2903
Enter Quantity:
Current price of APT13005T-G1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.71
$0.71
10
$0.59
$5.89
100
$0.38
$38.00
1000
$0.30
$304.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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