FMH20N50ES

FMH20N50ES
Mfr. #:
FMH20N50ES
Manufacturer:
Fuji Electric Co Ltd
Description:
Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
Lifecycle:
New from this manufacturer.
Datasheet:
FMH20N50ES Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
FMH20N, FMH20, FMH2, FMH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
FMH20N50ES
DISTI # FE0000000000949
Fuji Electric Co LtdPower Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
RoHS: Compliant
0 in Stock0 on Order
    FMH20N50ESSCQ-P
    DISTI # FE0000000004452
    Fuji Electric Co LtdMOSFET
    RoHS: Compliant
    0 in Stock0 on Order
      FMH20N50E-S33PPSCQ-P
      DISTI # FE0000000004449
      Fuji Electric Co LtdMOSFET
      RoHS: Compliant
      0 in Stock0 on Order
        FMH20N50ESCQ-P
        DISTI # FE0000000004451
        Fuji Electric Co LtdMOSFET
        RoHS: Compliant
        0 in Stock0 on Order
          FMH20N50ES-S33PPQ-P
          DISTI # FE0000000004450
          Fuji Electric Co LtdMOSFET
          RoHS: Compliant
          0 in Stock0 on Order
            Image Part # Description
            FMH2017FDA

            Mfr.#: FMH2017FDA

            OMO.#: OMO-FMH2017FDA-1190

            New and Original
            FMH20N50E

            Mfr.#: FMH20N50E

            OMO.#: OMO-FMH20N50E-1190

            Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
            FMH20N50ES

            Mfr.#: FMH20N50ES

            OMO.#: OMO-FMH20N50ES-1190

            Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
            FMH20N60S1

            Mfr.#: FMH20N60S1

            OMO.#: OMO-FMH20N60S1-1190

            MOSFET, N CHANNEL, 600V, 20A, TO-3P-3, Transistor Polarity:N Channel, Continuous Drain Current Id:20A, Drain Source Voltage Vds:600V, On Resistance Rds(on):0.161ohm, Rds(on) Test Voltage Vgs:10V,
            FMH20N60S1HF

            Mfr.#: FMH20N60S1HF

            OMO.#: OMO-FMH20N60S1HF-1190

            New and Original
            FMH20N60S1HF,FMH20N60,20

            Mfr.#: FMH20N60S1HF,FMH20N60,20

            OMO.#: OMO-FMH20N60S1HF-FMH20N60-20-1190

            New and Original
            FMH20N60S1HF-65-S33PP

            Mfr.#: FMH20N60S1HF-65-S33PP

            OMO.#: OMO-FMH20N60S1HF-65-S33PP-1190

            New and Original
            FMH20N60S1HF-S33PP

            Mfr.#: FMH20N60S1HF-S33PP

            OMO.#: OMO-FMH20N60S1HF-S33PP-1190

            New and Original
            Availability
            Stock:
            Available
            On Order:
            1500
            Enter Quantity:
            Current price of FMH20N50ES is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
            Reference price (USD)
            Quantity
            Unit Price
            Ext. Price
            1
            $0.00
            $0.00
            10
            $0.00
            $0.00
            100
            $0.00
            $0.00
            500
            $0.00
            $0.00
            1000
            $0.00
            $0.00
            Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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