MSC010SDA120K

MSC010SDA120K
Mfr. #:
MSC010SDA120K
Manufacturer:
Microchip / Microsemi
Description:
Schottky Diodes & Rectifiers 1200 V, 10 A SiC SBD
Lifecycle:
New from this manufacturer.
Datasheet:
MSC010SDA120K Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
MSC010SDA120K more Information
Product Attribute
Attribute Value
Manufacturer:
Microchip
Product Category:
Schottky Diodes & Rectifiers
RoHS:
Y
Product:
Schottky Silicon Carbide Diodes
Mounting Style:
Through Hole
Package / Case:
TO-220-2
If - Forward Current:
27 A
Vrrm - Repetitive Reverse Voltage:
1200 V
Vf - Forward Voltage:
1.5 V
Ifsm - Forward Surge Current:
75 A
Configuration:
Single
Technology:
SiC
Ir - Reverse Current:
3 uA
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
MSC0
Packaging:
Tube
Brand:
Microchip / Microsemi
Pd - Power Dissipation:
136 W
Product Type:
Schottky Diodes & Rectifiers
Factory Pack Quantity:
1
Subcategory:
Diodes & Rectifiers
trr - Reverse Recovery time:
0 ns
Vr - Reverse Voltage:
1200 V
Tags
MSC010S, MSC010, MSC01, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Diode Schottky SiC 1.2KV 27A 2-Pin(2+Tab) TO-220 Tube
***i-Key
DIODE SCHOTTKY 1.2KV 10A TO220-2
***hardson RFPD
SILICON CARBIDE DIODE
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
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Mfr.#: STPSC10H12D

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Mfr.#: STPSC10H12D

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Mfr.#: SCS308AMC

OMO.#: OMO-SCS308AMC-ROHM-SEMI

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Mfr.#: ERJ2RKD10R0X

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Mfr.#: USBF129T-I/SN

OMO.#: OMO-USBF129T-I-SN-MICROCHIP-TECHNOLOGY

IC FLASH 4M SPI 30MHZ 8SOIC
Availability
Stock:
185
On Order:
2168
Enter Quantity:
Current price of MSC010SDA120K is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$7.45
$7.45
5
$7.06
$35.30
10
$6.80
$68.00
25
$6.54
$163.50
50
$6.29
$314.50
100
$5.78
$578.00
250
$5.57
$1 392.50
500
$5.37
$2 685.00
1000
$4.93
$4 930.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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