IXTT80N20L

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-268-3

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

200 V

Id - Continuous Drain Current:

80 A

Rds On - Drain-Source Resistance:

32 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

180 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

520 W

Channel Mode:

Enhancement

Tradename:

Linear

Packaging:

Tube

Height:

5.1 mm

Length:

14 mm

Series:

IXTT80N20

Type:

Linear Power MOSFET

Width:

16.05 mm

Brand:

IXYS

Forward Transconductance - Min:

30 S

Fall Time:

29 ns

Product Type:

MOSFET

Rise Time:

44 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

72 ns

Typical Turn-On Delay Time:

29 ns

Unit Weight:

0.229281 oz

Tags

IXTT8, IXTT, IXT