BD237G

Mfr. #:: BD237G
Manufacturer:: ON Semiconductor
Description:: Bipolar Transistors - BJT 2A 80V 25W NPN
Lifecycle:: New from this manufacturer.
Datasheet:: BD237G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: BD237G Datasheet BD237G Datasheet (P4-P5)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: Bipolar Transistors - BJT

RoHS:: Y

Mounting Style:: Through Hole

Package / Case:: TO-225-3

Transistor Polarity:: NPN

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 80 V

Collector- Base Voltage VCBO:: 100 V

Emitter- Base Voltage VEBO:: 5 V

Collector-Emitter Saturation Voltage:: 0.6 V

Maximum DC Collector Current:: 2 A

Gain Bandwidth Product fT:: 3 MHz

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Series:: BD237

Height:: 11.04 mm

Length:: 7.74 mm

Packaging:: Bulk

Width:: 2.66 mm

Brand:: ON Semiconductor

Continuous Collector Current:: 2 A

DC Collector/Base Gain hfe Min:: 40

Pd - Power Dissipation:: 25 W

Product Type:: BJTs - Bipolar Transistors

Factory Pack Quantity:: 500

Subcategory:: Transistors

Unit Weight:: 0.023986 oz

Tags: BD237, BD23, BD2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BD237G Ratings and Reviews

L***r

item as described

2019-07-04

A***h

2019-02-08

I***v

good deal, thanks to the seller.

2019-05-12

BD237G Description

***Semiconductor: 2.0 A, 80 V, 25W NPN Bipolar Power Transistor

***ure Electronics: BD Series 80 V 2 A NPN Plastic Medium Power Transistor - TO-225

***p One Stop Global: Trans GP BJT NPN 80V 2A 25000mW 3-Pin(3+Tab) TO-225 Box

***Components: In a Pack of 25, ON Semiconductor, BD237G NPN Digital Transistor, 2 A 80 V dc, Single, 3-Pin TO-225

***et Europe: Trans GP BJT NPN 80V 2A 3-Pin TO-225 Bulk

***i-Key: TRANS NPN 80V 2A TO-225

***th Star Micro: . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers util complementary or quasi complementary circuits.

***ark: Bipolar Transistor, Npn, 80V To-225; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:80V; Transition Frequency Ft:3Mhz; Power Dissipation Pd:25W; Dc Collector Current:2A; Dc Current Gain Hfe:3Hfe; No. Of Pins:3Pins; Msl:-Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. TRANSISTOR, NPN, TO-126; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:3MHz; Power Dissipation Pd:25W; DC Collector Current:2A; DC Current Gain hFE:3hFE; Transistor Case Style:TO-225AA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):600mV; Continuous Collector Current Ic Max:2A; Current Ic Continuous a Max:2A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Gain Bandwidth ft Typ:3MHz; Hfe Min:25; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:26W; Voltage Vcbo:100V

***nell: TRANSISTOR, NPN, TO-126; Polarità Transistor:NPN; Tensione Collettore-Emettitore V(br)ceo:80V; Frequenza di Transizione ft:3MHz; Dissipazione di Potenza Pd:25W; Corrente di Collettore CC:2A; Guadagno di Corrente CC hFE:3hFE; Modello Case Transistor:TO-225AA; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Continua di Collettore Ic Max:2A; Corrente Ic Continua a Max:2A; Corrente Ic hFE:1A; Dissipazione di Potenza Ptot Max:26W; Hfe Min.:25; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Larghezza di Banda Guadagno ft Min:3MHz; Larghezza di Banda Guadagno ft Typ:3MHz; Livello Temperatura a Piena Potenza:25°C; No. di Transistor:1; Temperatura di Esercizio Min:-55°C; Tensione Saturaz Collettore-Emettitore Vce(on):600mV; Tensione Vcbo:100V

Market price

Part #	Mfg.	Description	Stock	Price
BD237G DISTI # V36:1790_07322887	ON Semiconductor	Trans GP BJT NPN 80V 2A 3-Pin(3+Tab) TO-225 Box RoHS: Compliant	70	50000:$0.1792 25000:$0.1826 10000:$0.1917 2500:$0.2000 1000:$0.2159 500:$0.2852
BD237G DISTI # BD237GOS-ND	ON Semiconductor	TRANS NPN 80V 2A TO-225 RoHS: Compliant Min Qty: 1 Container: Bulk	2085In Stock	1000:$0.2635 500:$0.3410 100:$0.4339 10:$0.5810 1:$0.6800
BD237G DISTI # 25633086	ON Semiconductor	Trans GP BJT NPN 80V 2A 3-Pin(3+Tab) TO-225 Box RoHS: Compliant	72500	2500:$0.1872
BD237G DISTI # 21062228	ON Semiconductor	Trans GP BJT NPN 80V 2A 3-Pin(3+Tab) TO-225 Box RoHS: Compliant	2000	500:$0.1968
BD237G DISTI # 19257514	ON Semiconductor	Trans GP BJT NPN 80V 2A 3-Pin(3+Tab) TO-225 Box RoHS: Compliant	908	305:$0.2050
BD237G DISTI # 26065384	ON Semiconductor	Trans GP BJT NPN 80V 2A 3-Pin(3+Tab) TO-225 Box RoHS: Compliant	70	70:$0.4682
BD237G DISTI # BD237G	ON Semiconductor	Trans GP BJT NPN 80V 2A 3-Pin TO-225 Bulk - Bulk (Alt: BD237G) RoHS: Compliant Min Qty: 2500 Container: Bulk	Americas - 0	2500:$0.1919 3500:$0.1909 6000:$0.1889 12500:$0.1859 25000:$0.1819
BD237G DISTI # 26K3499	ON Semiconductor	Trans GP BJT NPN 80V 2A 3-Pin TO-225 Bulk - Bulk (Alt: 26K3499) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$0.6500 10:$0.5330 100:$0.3250 500:$0.2880 1000:$0.2510 2500:$0.2150 10000:$0.2000
BD237G DISTI # 26K3499	ON Semiconductor	BIPOLAR TRANSISTOR, NPN, 80V TO-225,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:3MHz,Power Dissipation Pd:25W,DC Collector Current:2A,DC Current Gain hFE:3hFE,No. of Pins:3Pins,MSL:-, RoHS Compliant: Yes	908	1:$0.1640 10:$0.1640 100:$0.1640 500:$0.1640 1000:$0.1640 2500:$0.1640 10000:$0.1640
BD237G	ON Semiconductor	RoHS: Not Compliant	11985	1000:$0.2400 500:$0.2500 100:$0.2600 25:$0.2700 1:$0.2900
BD237G DISTI # 863-BD237G	ON Semiconductor	Bipolar Transistors - BJT 2A 80V 25W NPN RoHS: Compliant	719	1:$0.6500 10:$0.5330 100:$0.3250 1000:$0.2510 2500:$0.2150 10000:$0.2000 25000:$0.1890
BD237 DISTI # 863-BD237	ON Semiconductor	Bipolar Transistors - BJT 2A 80V 25W NPN RoHS: Not compliant	0
BD237G	ON Semiconductor	RoHS: Compliant	Europe - 180
BD237G	ON Semiconductor	INSTOCK	3182
BD237G	ON Semiconductor	INSTOCK	4167
BD237G DISTI # XSFP00000072520	ON SEMICONDUCTOR	PowerBipolarTransistor,2AI(C),80VV(BR)CEO,1-Element,NPN,Silicon,TO-225AA,Plastic/Epoxy, 3Pin RoHS: Compliant	2355	500:$0.4200 2355:$0.3818
BD237G DISTI # 9557571	ON Semiconductor	TRANSISTOR, NPN, TO-126 RoHS: Compliant	770	5:£0.4600 25:£0.4270 100:£0.2480 250:£0.2200 500:£0.1930
BD237G	ON Semiconductor	Plastic Medium Power Silicon NPN Transistor	3600	1:$0.3700 100:$0.2900 500:$0.2600 1000:$0.2400
BD237G DISTI # 9557571	ON Semiconductor	TRANSISTOR, NPN, TO-126 RoHS: Compliant	340	1:$1.0300 10:$0.8440 100:$0.5150 1000:$0.3970 2500:$0.3410 10000:$0.3170 25000:$0.3000 50000:$0.2930

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