OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BD237G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 17
1 Publication Order Number:
BD237/D
BD237G (NPN),
BD234G,BD238G (PNP)
Plastic Medium Power
Bipolar Transistors
Designed for use in 5.0 to 10 W audio amplifiers and drivers
utilizing complementary or quasi complementary circuits.
Features
• High DC Current Gain
• Epoxy Meets UL 94 V0 @ 0.125 in
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BD234G
DB237G, BD238G
V
CEO
45
80
Vdc
Collector−Base Voltage
BD234G
DB237G, BD238G
V
CBO
60
100
Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current I
C
2.0 Adc
Base Current I
B
1.0 Adc
Total Device Dissipation
@ T
C
= 25_C
P
D
25
W
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150
_C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
5.0
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MARKING DIAGRAM
Y = Year
WW = Work Week
BD23x = Device Code
x = 4, 7 or 8
G = Pb−Free Package
http://onsemi.com
2.0 AMPERES
POWER TRANSISTORS
25 WATTS
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data
sheet.
ORDERING INFORMATION
3
BASE
1
EMITTER
COLLECTOR
2, 4
3
BASE
1
EMITTER
COLLECTOR
2, 4
PNP NPN
TO−225
CASE 77−09
STYLE 1
1
2
3
YWW
BD23xG
BD237G (NPN), BD234G, BD238G (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Max Unit
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 0.1 Adc, I
B
= 0)
BD237G, BD238G
BD234G
V
(BR)CEO
80
45
−
−
Vdc
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
BD237G, BD238G
(V
CB
= 60 Vdc, I
E
= 0)
BD234G
I
CBO
−
−
0.1
0.1
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
− 1.0
mAdc
DC Current Gain
(I
C
= 0.15 A, V
CE
= 2.0 V)
(I
C
= 1.0 A, V
CE
= 2.0 V)
h
FE1
h
FE2
40
25
−
−
−
Collector−Emitter Saturation Voltage (Note 1)
(I
C
= 1.0 Adc, I
B
= 0.1 Adc)
V
CE(sat)
− 0.6
Vdc
Base−Emitter On Voltage (Note 1)
(I
C
= 1.0 Adc, V
CE
= 2.0 Vdc)
V
BE(on)
− 1.3
Vdc
Current−Gain − Bandwidth Product
(I
C
= 250 mAdc, V
CE
= 10 Vdc, f = 1.0 MHz)
f
T
3.0 −
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Figure 1. Active Region Safe Operating Area
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
3
1
0.1
3 10 30 100
0.3
I
C
, COLLECTOR CURRENT (AMP)
T
J
= 150°C
dc
5 ms
1
100 ms
1 ms
BD237
BD236
The Safe Operating Area Curves indicate I
C−
V
CE
limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum T
J
,
power−temperature derating must be observed for both
steady state and pulse power conditions.
BD237G (NPN), BD234G, BD238G (PNP)
http://onsemi.com
3
1000
I
C
, COLLECTOR CURRENT (mA)
10
100
T
J
= + 150°C
T
J
= - 55°C
V
CE
= 2.0 V
h
FE
, DC CURRENT GAIN (NORMALIZED)
700
500
300
200
70
50
30
20
T
J
= + 25°C
3.0 5.0 10 20 30 50 20002.0 100 200 1000300 500
0
1.5
3.0 5.0 10 20 30 50 20002.0 100 200 1000300 500
1.2
0.9
0.6
0.3
I
C
, COLLECTOR CURRENT (mA)
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
VOLTAGE (VOLTS)
V
BE
@ V
CE
= 2.0 V
t, TIME or PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500
q
JC
(t) = r(t) q
JC
q
JC
= 4.16°C/W MAX
q
JC
= 3.5°C/W TYP
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
SINGLE PULSE
D = 0.2
D = 0.1
D = 0.05
D = 0.01
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Collector Saturation Region
I
B
, BASE CURRENT (mA)
1.0
0
0.2
0.8
0.6
0.4
0.2
1.0 2.0 10 30 50 200
I
C
= 0.1 A 0.25 A 1.0 A0.5 A
0.3 0.5 100203.0 5.0
T
J
= 25°C
Figure 3. Current Gain Figure 4. “On” Voltages
Figure 5. Thermal Response
P1-P3P4-P5

BD237G

Mfr. #:
Buy BD237G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 2A 80V 25W NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet