NVMFS5H663NLT1G

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

DFN-5

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

67 A

Rds On - Drain-Source Resistance:

7.2 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

17 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

63 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

ON Semiconductor

Forward Transconductance - Min:

64 S

Fall Time:

9.5 ns

Product Type:

MOSFET

Rise Time:

52.7 ns

Factory Pack Quantity:

1500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

26.2 ns

Typical Turn-On Delay Time:

13.4 ns

Tags

NVMFS5, NVMFS, NVMF, NVM