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IPB65R660CFDAATMA1

IPB65R660CFDAATMA1
Mfr. #:
IPB65R660CFDAATMA1
Manufacturer:
Infineon / IR
Description:
MOSFET N-Ch 650V 6A D2PAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
IPB65R660CFDAATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
6 A
Rds On - Drain-Source Resistance:
594 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
20 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
62.5 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Series:
CoolMOS CFDA
Transistor Type:
1 N-Channel
Brand:
Infineon / IR
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
40 ns
Typical Turn-On Delay Time:
9 ns
Part # Aliases:
IPB65R660CFDA IPB65R66CFDAXT SP000875794
Unit Weight:
0.068654 oz
Tags
IPB65R660CFDA, IPB65R66, IPB65R6, IPB65, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    L***v
    L***v
    RU

    Irreplaceable thing) hood) 5 stars) i recommend)

    2019-03-28
    H***a
    H***a
    BY

    Everything corresponds to the description, delivery is two months.

    2019-04-27
    V***v
    V***v
    RU

    It's okay.

    2019-07-10
    S***v
    S***v
    RU

    Great. Everything corresponds to the description. Quality is good. I recommend.

    2019-06-07
***ical
Trans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) D2PAK T/R
*** Stop Electro
Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon SCT
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO263-3, RoHS
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
Part # Mfg. Description Stock Price
IPB65R660CFDAATMA1
DISTI # V72:2272_06383166		Infineon Technologies AGTrans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB65R660CFDAATMA1
    DISTI # V36:1790_06383166    		Infineon Technologies AGTrans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		0
      IPB65R660CFDAATMA1
      DISTI # IPB65R660CFDAATMA1-ND      		Infineon Technologies AGMOSFET N-CH TO263-3
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 1000:$1.1326
      IPB65R660CFDAATMA1
      DISTI # IPB65R660CFDAATMA1      		Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin TO-263 T/R - Bulk (Alt: IPB65R660CFDAATMA1)
      Min Qty: 385
      Container: Bulk      		Americas - 0
      • 3850:$0.8249
      • 1925:$0.8399
      • 1155:$0.8699
      • 770:$0.9019
      • 385:$0.9359
      IPB65R660CFDAATMA1
      DISTI # SP000875794      		Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin TO-263 T/R (Alt: SP000875794)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape and Reel      		Europe - 0
      • 10000:€0.7879
      • 6000:€0.8439
      • 4000:€0.9089
      • 2000:€0.9849
      • 1000:€1.1819
      IPB65R660CFDAXT
      DISTI # IPB65R660CFDAATMA1      		Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB65R660CFDAATMA1)
      RoHS: Compliant
      Min Qty: 1000
      Container: Reel      		Americas - 0
      • 10000:$0.9019
      • 6000:$0.9179
      • 4000:$0.9499
      • 2000:$0.9859
      • 1000:$1.0229
      IPB65R660CFDA
      DISTI # 726-IPB65R660CFDA      		Infineon Technologies AGMOSFET N-Ch 650V 6A D2PAK-2
      RoHS: Compliant      		523
      • 1:$2.0900
      • 10:$1.7700
      • 100:$1.4200
      • 500:$1.2400
      • 1000:$1.0300
      • 2000:$0.9590
      • 5000:$0.9240
      IPB65R660CFDAATMA1
      DISTI # 726-IPB65R660CFDAATM      		Infineon Technologies AGMOSFET N-Ch 650V 6A D2PAK-2
      RoHS: Compliant      		180
      • 1:$2.0900
      • 10:$1.7700
      • 100:$1.4200
      • 500:$1.2400
      • 1000:$1.0300
      • 2000:$0.9590
      • 5000:$0.9240
      IPB65R660CFDAATMA1Infineon Technologies AGPower Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      RoHS: Compliant      		30000
      • 1000:$0.8600
      • 500:$0.9000
      • 100:$0.9400
      • 25:$0.9800
      • 1:$1.0500
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      Availability
      Stock:
      180
      On Order:
      2163
      Enter Quantity:
      Current price of IPB65R660CFDAATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.09
      $2.09
      10
      $1.77
      $17.70
      100
      $1.42
      $142.00
      500
      $1.24
      $620.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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