 | |  | |
| PartNumber | IPB65R660CFDA | IPB65R660CFDAATMA1 | IPB65R660CFD |
| Description | MOSFET N-Ch 650V 6A D2PAK-2 | MOSFET N-Ch 650V 6A D2PAK-2 | MOSFET N-Ch 650V 6A D2PAK-2 CoolMOS CFD2 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 6 A | 6 A | - |
| Rds On Drain Source Resistance | 594 mOhms | 594 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 3.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 20 nC | 20 nC | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 62.5 W | 62.5 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | Reel |
| Series | CoolMOS | CoolMOS CFDA | CoolMOS CFD2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Infineon / IR | Infineon / IR | - |
| Fall Time | 10 ns | 10 ns | 10 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8 ns | 8 ns | 8 ns |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns | 40 ns | - |
| Typical Turn On Delay Time | 9 ns | 9 ns | - |
| Part # Aliases | IPB65R660CFDAATMA1 IPB65R66CFDAXT SP000875794 | IPB65R660CFDA IPB65R66CFDAXT SP000875794 | - |
| Unit Weight | 0.077603 oz | 0.068654 oz | 0.139332 oz |
| Part Aliases | - | - | IPB65R660CFDATMA1 IPB65R660CFDXT SP000861698 |
| Tradename | - | - | CoolMOS |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 63 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 6 A |
| Vds Drain Source Breakdown Voltage | - | - | 650 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 660 mOhms |
| Qg Gate Charge | - | - | 22 nC |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon / IR |
IPB65R660CFDA | MOSFET N-Ch 650V 6A D2PAK-2 | |
| IPB65R660CFDAATMA1 | MOSFET N-Ch 650V 6A D2PAK-2 | ||
| IPB65R660CFDAXT | Trans MOSFET N-CH 650V 6A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB65R660CFDAATMA1) | ||
| IPB65R660CFD | MOSFET N-Ch 650V 6A D2PAK-2 CoolMOS CFD2 | ||
| IPB65R660CFDA | MOSFET N-Ch 650V 6A D2PAK-2 | ||
Infineon Technologies |
IPB65R660CFDATMA1 | MOSFET N-CH 650V 6A TO263 | |
| IPB65R660CFDAATMA1 | RF Bipolar Transistors MOSFET N-Ch 650V 6A D2PAK-2 |