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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| IPG20N06S2L50ATMA1 DISTI # V72:2272_06390893 | Infineon Technologies AG | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| IPG20N06S2L50ATMA1 DISTI # V36:1790_06390893 | Infineon Technologies AG | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R RoHS: Compliant | 0 |
|
| IPG20N06S2L50ATMA1 DISTI # IPG20N06S2L50ATMA1TR-ND | Infineon Technologies AG | MOSFET 2N-CH 55V 20A TDSON-8-4 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| IPG20N06S2L50ATMA1 DISTI # 32315859 | Infineon Technologies AG | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| IPG20N06S2L50ATMA1 DISTI # 31343684 | Infineon Technologies AG | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| IPG20N06S2L50ATMA1 DISTI # IPG20N06S2L50ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 55V 20A 8-Pin TDSON EP - Tape and Reel (Alt: IPG20N06S2L50ATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 5000 |
|
| IPG20N06S2L50ATMA1 DISTI # IPG20N06S2L50ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 55V 20A 8-Pin TDSON EP - Bulk (Alt: IPG20N06S2L50ATMA1) RoHS: Compliant Min Qty: 782 Container: Bulk | Americas - 0 |
|
| IPG20N06S2L50ATMA1. DISTI # 27AC6734 | Infineon Technologies AG | Transistor Polarity:Dual N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power Dissipation Pd:51W,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
| IPG20N06S2L50ATMA1 | Infineon Technologies AG | Dual N-Channel 55 V 50 mOhm 13 nC OptiMOS Power Mosfet - TDSON-8-4 RoHS: Not Compliant Min Qty: 5000 | 5000Reel |
|
| IPG20N06S2L-50 DISTI # 726-IPG20N06S2L-50 | Infineon Technologies AG | MOSFET N-Ch 55V 20A TDSON-8 OptiMOS RoHS: Compliant | 4858 |
|
| IPG20N06S2L50ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 20A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 19764 |
|
| IPG20N06S2L50ATMA1 DISTI # 2480843RL | Infineon Technologies AG | MOSFET, DUAL N-CH, 55V, 20A, TDSON-8 RoHS: Compliant | 0 |
|
| IPG20N06S2L50ATMA1 DISTI # 2480843 | Infineon Technologies AG | MOSFET, DUAL N-CH, 55V, 20A, TDSON-8 RoHS: Compliant | 1228 |
|
| IPG20N06S2L50ATMA1 DISTI # 2480843 | Infineon Technologies AG | MOSFET, DUAL N-CH, 55V, 20A, TDSON-8 | 1218 |
|
| IPG20N06S2L50ATMA1 DISTI # XSFP00000149988 | Infineon Technologies AG | Dual N-Channel 55 V 50 mOhm 13 nC OptiMOS Power Mosfet - TDSON-8-4 RoHS: Compliant | 10000 in Stock0 on Order |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: IPQGT1206-200ASMD OMO.#: OMO-IPQGT1206-200ASMD-1190 |
New and Original |