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BSC240N12NS3 G

BSC240N12NS3 G
Mfr. #:
BSC240N12NS3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 120V 37A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSC240N12NS3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
120 V
Id - Continuous Drain Current:
37 A
Rds On - Drain-Source Resistance:
24 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
20 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
66 W
Configuration:
Single
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Fall Time:
4 nS
Product Type:
MOSFET
Rise Time:
4 nS
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
13 nS
Part # Aliases:
BSC240N12NS3GATMA1 SP000819812
Tags
BSC2, BSC
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 120V 37A 8TDSON
Part # Mfg. Description Stock Price
BSC240N12NS3 G
DISTI # BSC240N12NS3GTR-ND		Infineon Technologies AGMOSFET N-CH 120V 37A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Limited Supply - Call
    BSC240N12NS3 G
    DISTI # BSC240N12NS3GCT-ND    		Infineon Technologies AGMOSFET N-CH 120V 37A 8TDSON
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      BSC240N12NS3 G
      DISTI # BSC240N12NS3GDKR-ND      		Infineon Technologies AGMOSFET N-CH 120V 37A 8TDSON
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        BSC240N12NS3 G
        DISTI # 726-BSC240N12NS3G        		Infineon Technologies AGMOSFET N-Ch 120V 37A TDSON-8 OptiMOS 3
        RoHS: Compliant        		0
          BSC240N12NS3GInfineon Technologies AGPower Field-Effect Transistor, 37A I(D), 120V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant          		9047
          • 1000:$0.4600
          • 500:$0.4900
          • 100:$0.5100
          • 25:$0.5300
          • 1:$0.5700
          BSC240N12NS3 GInfineon Technologies AGPower Field-Effect Transistor, 37A I(D), 120V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Not Compliant          		714
          • 1000:$0.4600
          • 500:$0.4900
          • 100:$0.5100
          • 25:$0.5300
          • 1:$0.5700
          Image Part # Description
          BSC240N12NS3 G

          Mfr.#: BSC240N12NS3 G

          OMO.#: OMO-BSC240N12NS3-G

          		 MOSFET N-Ch 120V 37A TDSON-8 OptiMOS 3
          BSC240N12NS3G

          Mfr.#: BSC240N12NS3G

          OMO.#: OMO-BSC240N12NS3G-1190

          		 Power Field-Effect Transistor, 37A I(D), 120V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          BSC240N12NS3 G

          Mfr.#: BSC240N12NS3 G

          OMO.#: OMO-BSC240N12NS3-G-INFINEON-TECHNOLOGIES

          		 IGBT Transistors MOSFET N-Ch 120V 37A TDSON-8 OptiMOS 3
          Availability
          Stock:
          Available
          On Order:
          3500
          Enter Quantity:
          Current price of BSC240N12NS3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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