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IXTA02N250HV

IXTA02N250HV
Mfr. #:
IXTA02N250HV
Manufacturer:
Littelfuse
Description:
MOSFET SMD N-CHANNEL POWER MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IXTA02N250HV Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTA02N250HV DatasheetIXTA02N250HV Datasheet (P4-P5)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263AB-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
2.5 kV
Id - Continuous Drain Current:
200 mA
Rds On - Drain-Source Resistance:
450 Ohms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
7.4 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
83 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Series:
Very High Voltage
Transistor Type:
1 N-Channel
Brand:
IXYS
Forward Transconductance - Min:
88 mS
Fall Time:
33 ns
Product Type:
MOSFET
Rise Time:
19 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
32 ns
Typical Turn-On Delay Time:
19 ns
Unit Weight:
0.062435 oz
Tags
IXTA02N2, IXTA02, IXTA0, IXTA, IXT
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) TO-263ABVHV
***i-Key
MOSFET N-CH 2500V 200MA TO263AB
*** Electronics
MOSFET N-CH 2500V 0.2A TO263
***ponent Stockers USA
10.6 A 650 V 0.38 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO263-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***p One Stop
Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) TO-263
***ineon SCT
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO263-3, RoHS
***ark
Mosfet, N-Ch, 150V, 21A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.044Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***emi
N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ
***ure Electronics
N-Channel 30 V 5.7 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
***et Europe
Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 30V, 93A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***emi
Power MOSFET, P-Channel, -60V, -100A, 5.8mΩ
***ure Electronics
P-Channel 60 V 100 A 5.8 mOhm Surface Mount Power Mosfet - TO-263
***ark
MOSFET, P-CH, -60V, -100A, TO-263; Channel Type:P Channel; Drain Source Voltage Vds:-60V; Continuous Drain Current Id:-100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2.6V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 100A I(D), 60V, 0.009ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, P-CH, -60V, -100A, TO-263; Transistor Polarity: P Channel; Continuous Drain Current Id: -100A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.0044ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.6V; Power Dissipation Pd: 90W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ical
Trans MOSFET P-CH 75V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
***ark
MOSFET, P-CH, -75V, -100A, TO-263-3; Channel Type:P Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 100A I(D), 75V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, P-CH, -75V, -100A, TO-263-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -100A; Drain Source Voltage Vds: -75V; On Resistance Rds(on): 0.0062ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 90W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ure Electronics
Single N-Channel 100 V 26.3 mOhm 30 nC OptiMOS™ Power Mosfet - D2PAK
***ineon SCT
100V, N-Ch, 26.3 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHS
***p One Stop
Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) TO-263 T/R
***nell
MOSFET, AEC-Q101, N-CH, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0203ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.
*** Stop Electro
Power Field-Effect Transistor, 35A I(D), 100V, 0.0322ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
Part # Mfg. Description Stock Price
IXTA02N250HV
DISTI # V36:1790_07768253		IXYS CorporationTrans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) TO-263AB
RoHS: Compliant		79
  • 1000:$5.2180
  • 500:$5.4850
  • 250:$5.9710
  • 100:$6.4980
  • 50:$6.6890
  • 25:$7.1710
  • 10:$8.3710
  • 1:$9.1740
IXTA02N250HV
DISTI # IXTA02N250HV-ND		IXYS CorporationMOSFET N-CH 2500V 0.2A TO263
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$8.5690
IXTA02N250HV
DISTI # 27534873		IXYS CorporationTrans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) TO-263AB
RoHS: Compliant		95
  • 1000:$5.6640
  • 500:$5.9424
  • 250:$6.5088
  • 100:$7.1328
  • 50:$7.2960
  • 25:$7.8528
  • 10:$9.4368
  • 2:$10.4832
IXTA02N250HV
DISTI # 31433598		IXYS CorporationTrans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) TO-263AB
RoHS: Compliant		79
  • 2:$9.1740
IXTA02N250HV
DISTI # 747-IXTA02N250HV		IXYS CorporationMOSFET SMD N-CHANNEL POWER MOSFET
RoHS: Compliant		0
  • 1:$10.9200
  • 10:$9.8300
  • 25:$8.1800
  • 50:$7.6000
  • 100:$7.4300
  • 250:$6.7800
  • 500:$6.1900
  • 1000:$5.9000
IXTA02N250HV
DISTI # C1S331700093820		IXYS CorporationTrans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) TO-263AB
RoHS: Compliant		95
  • 50:$8.6700
  • 25:$9.4500
  • 10:$9.6600
  • 1:$14.1000
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Availability
Stock:
315
On Order:
2298
Enter Quantity:
Current price of IXTA02N250HV is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$10.92
$10.92
10
$9.83
$98.30
25
$8.18
$204.50
50
$7.60
$380.00
100
$7.43
$743.00
250
$6.78
$1 695.00
500
$6.19
$3 095.00
1000
$5.90
$5 900.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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