SISS06DN-T1-GE3

SISS06DN-T1-GE3
Mfr. #:
SISS06DN-T1-GE3
Manufacturer:
Vishay
Description:
N-Channel 30 V (D-S) MOSFET PowerPAK 1212-8S 1G SG 2 mil , 1.38 m @ 10V m @ 7.5V 2.03 m @ 4.5V
Lifecycle:
New from this manufacturer.
Datasheet:
SISS06DN-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SISS06DN-T1-GE3 more Information
Product Attribute
Attribute Value
Tags
SISS0, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Part # Mfg. Description Stock Price
SISS06DN-T1-GE3
DISTI # V72:2272_22759348
Vishay IntertechnologiesN-Channel 30 V (D-S) MOSFET PowerPAK 1212-8S 1G SG 2 mil , 1.38 m @ 10Vm @ 7.5V 2.03 m @ 4.5V0
    SISS06DN-T1-GE3
    DISTI # SISS06DN-T1-GE3CT-ND
    Vishay SiliconixMOSFET N-CHAN 30 V POWERPAK 1212
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    50In Stock
    • 1000:$0.5353
    • 500:$0.6781
    • 100:$0.8209
    • 10:$1.0530
    • 1:$1.1800
    SISS06DN-T1-GE3
    DISTI # SISS06DN-T1-GE3DKR-ND
    Vishay SiliconixMOSFET N-CHAN 30 V POWERPAK 1212
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    50In Stock
    • 1000:$0.5353
    • 500:$0.6781
    • 100:$0.8209
    • 10:$1.0530
    • 1:$1.1800
    SISS06DN-T1-GE3
    DISTI # SISS06DN-T1-GE3TR-ND
    Vishay SiliconixMOSFET N-CHAN 30 V POWERPAK 1212
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 15000:$0.4435
    • 6000:$0.4608
    • 3000:$0.4851
    SISS06DN-T1-GE3
    DISTI # SISS06DN-T1-GE3
    Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SISS06DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel
    Americas - 0
    • 60000:$0.4229
    • 30000:$0.4339
    • 18000:$0.4469
    • 12000:$0.4659
    • 6000:$0.4799
    SISS06DN-T1-GE3
    DISTI # 99AC9587
    Vishay IntertechnologiesMOSFET, N-CH, 30V, 172.6A, 150DEG C,Transistor Polarity:N Channel,Continuous Drain Current Id:172.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.00115ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes50
    • 500:$0.6340
    • 250:$0.6860
    • 100:$0.7370
    • 50:$0.8120
    • 25:$0.8860
    • 10:$0.9610
    • 1:$1.1600
    SISS06DN-T1-GE3
    DISTI # 81AC3499
    Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET0
    • 10000:$0.4200
    • 6000:$0.4290
    • 4000:$0.4460
    • 2000:$0.4950
    • 1000:$0.5450
    • 1:$0.5680
    SISS06DN-T1-GE3
    DISTI # 78-SISS06DN-T1-GE3
    Vishay IntertechnologiesMOSFET 30V Vds,20/-16V Vgs PowerPAK 1212-8S
    RoHS: Compliant
    40
    • 1:$1.1500
    • 10:$0.9510
    • 100:$0.7300
    • 500:$0.6280
    • 1000:$0.4950
    • 3000:$0.4620
    • 6000:$0.4390
    • 9000:$0.4230
    SISS06DN-T1-GE3
    DISTI # 3019137
    Vishay IntertechnologiesMOSFET, N-CH, 30V, 172.6A, 150DEG C
    RoHS: Compliant
    50
    • 5000:$0.7440
    • 1000:$0.7490
    • 500:$0.9250
    • 250:$1.0200
    • 100:$1.1200
    • 25:$1.4200
    • 5:$1.5600
    SISS06DN-T1-GE3
    DISTI # 3019137
    Vishay IntertechnologiesMOSFET, N-CH, 30V, 172.6A, 150DEG C50
    • 500:£0.4550
    • 250:£0.4920
    • 100:£0.5290
    • 10:£0.7430
    • 1:£0.9470
    Image Part # Description
    SISS06DN-T1-GE3

    Mfr.#: SISS06DN-T1-GE3

    OMO.#: OMO-SISS06DN-T1-GE3

    MOSFET 30V Vds; 20/-16V Vgs PowerPAK 1212-8S
    SISS06DN-T1-GE3

    Mfr.#: SISS06DN-T1-GE3

    OMO.#: OMO-SISS06DN-T1-GE3-VISHAY

    N-Channel 30 V (D-S) MOSFET PowerPAK 1212-8S 1G SG 2 mil , 1.38 m @ 10V m @ 7.5V 2.03 m @ 4.5V
    Availability
    Stock:
    Available
    On Order:
    4500
    Enter Quantity:
    Current price of SISS06DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.63
    $0.63
    10
    $0.60
    $6.03
    100
    $0.57
    $57.11
    500
    $0.54
    $269.65
    1000
    $0.51
    $507.60
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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