HGTG30N60B3D

Mfr. #:: HGTG30N60B3D
Manufacturer:: ON Semiconductor / Fairchild
Description:: IGBT Transistors 600V IGBT UFS N-Channel
Lifecycle:: New from this manufacturer.
Datasheet:: HGTG30N60B3D Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 1.45 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 60 A

Pd - Power Dissipation:: 208 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Series:: HGTG30N60B3D

Packaging:: Tube

Continuous Collector Current Ic Max:: 60 A

Height:: 20.82 mm

Length:: 15.87 mm

Width:: 4.82 mm

Brand:: ON Semiconductor / Fairchild

Continuous Collector Current:: 60 A

Gate-Emitter Leakage Current:: +/- 250 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 450

Subcategory:: IGBTs

Part # Aliases:: HGTG30N60B3D_NL

Unit Weight:: 0.225401 oz

Tags: HGTG30N60B3D, HGTG30N60B3, HGTG30N60B, HGTG30N60, HGTG30N6, HGTG30N, HGTG30, HGTG3, HGTG, HGT

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTG30N60B3D Description

***ark: IGBT Single Transistor, 60 A, 1.9 V, 208 W, 600 V, TO-247, 3 RoHS Compliant: Yes

***ical: Trans IGBT Chip N=-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Rail

***inecomponents.com: 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast

***et: 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST

***p One Stop Japan: Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail

***ure Electronics: HGTG30N60B3D Series 600 V 60 A Flange Mount UFS N-Channel IGBT-TO-247

***ser: IGBTs 600V, IGBT UFS N-Channel

***i-Key: IGBT N-CH UFS 600V 30A TO-247

***trelec: IGBT Housing type: TO-247 Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.1 V Current release time: 200 ns Power dissipation: 208 W

***Semiconductor: 600V, PT IGBT

***ment14 APAC: Prices include import duty and tax. IGBT,N CH,600V,30A,TO-247; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:208W; Transistor Type:IGBT

***nell: IGBT,N CH,600V,30A,TO-247; Corrente di Collettore CC:60A; Tensione Saturaz Collettore-Emettitore Vce(on):1.9V; Dissipazione di Potenza Pd:208W; Tensione Collettore-Emettitore V(br)ceo:600V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018); Dissipazione di Potenza Max:208W; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tipo di Transistor:IGBT

***rchild Semiconductor: The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.

Market price

Part #	Mfg.	Description	Stock	Price
HGTG30N60B3D DISTI # V99:2348_06359031	ON Semiconductor	PTPIGBT TO247 60A 600V	204	500:$4.0640 250:$4.2640 100:$4.6150 25:$5.1460 10:$5.4660 1:$5.9900
HGTG30N60B3D DISTI # HGTG30N60B3D-ND	ON Semiconductor	IGBT 600V 60A 208W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	1604In Stock	900:$4.4340 450:$4.8630 10:$6.1500 1:$6.8100
HGTG30N60B3D DISTI # 26882380	ON Semiconductor	PTPIGBT TO247 60A 600V	204	500:$4.0640 250:$4.2640 100:$4.6150 25:$5.1460 10:$5.4660 2:$5.9900
HGTG30N60B3D DISTI # 30618810	ON Semiconductor	PTPIGBT TO247 60A 600V	58	50:$4.4752 10:$4.7940 4:$6.6045
HGTG30N60B3D DISTI # HGTG30N60B3D	ON Semiconductor	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG30N60B3D) RoHS: Compliant Min Qty: 1	Europe - 0	1:€3.7900 10:€3.4900 25:€3.2900 50:€3.1900 100:€3.0900 500:€2.9900 1000:€2.7900
HGTG30N60B3D DISTI # HGTG30N60B3D	ON Semiconductor	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG30N60B3D) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$4.4900 900:$4.3900 1800:$4.3900 2700:$4.2900 4500:$4.1900
HGTG30N60B3D DISTI # 58K1592	ON Semiconductor	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1592) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$6.4900 10:$5.8600 25:$5.5900 50:$5.2200 100:$4.8500 250:$4.6400
HGTG30N60B3D DISTI # 58K1592	ON Semiconductor	SINGLE IGBT, 600V, 60A,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.45V,Power Dissipation Pd:208W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	456	250:$4.8700 100:$5.0800 50:$5.4500 25:$5.8200 10:$6.0900 1:$6.7200
HGTG30N60B3D DISTI # 512-HGTG30N60B3D	ON Semiconductor	IGBT Transistors 600V IGBT UFS N-Channel RoHS: Compliant	414	1:$6.4800 10:$5.8500 25:$5.5800 100:$4.8500 250:$4.6300 500:$4.2200
HGTG30N60B3D_Q DISTI # 512-HGTG30N60B3D_Q	ON Semiconductor	IGBT Transistors 600V IGBT UFS N-Channel RoHS: Not compliant	0
HGTG30N60B3D	Fairchild Semiconductor Corporation	RoHS: Not Compliant	16000	1000:$5.0400 500:$5.3100 100:$5.5200 25:$5.7600 1:$6.2000
HGTG30N60B3D	Fairchild Semiconductor Corporation		30
HGTG30N60B3D_R4731	Fairchild Semiconductor Corporation		5
HGTG30N60B3D	Fairchild Semiconductor Corporation	60 A, 600 V, N-CHANNEL IGBT, TO-247	3	2:$5.4000 1:$8.1000
HGTG30N60B3D DISTI # HGTG30N60B3D	ON Semiconductor	Transistor: IGBT,600V,30A,208W,TO247	256	1:$6.5700 3:$5.9700 10:$4.9600 30:$4.3400 120:$3.9400
HGTG30N60B3D.. DISTI # 1838984	ON Semiconductor	IGBT,N CH,600V,30A,TO-247 RoHS: Compliant	676	100:£3.9100 50:£4.2200 10:£4.5100 5:£5.2300 1:£6.0700
HGTG30N60B3D.. DISTI # 1838984	ON Semiconductor	IGBT,N CH,600V,30A,TO-247 RoHS: Compliant	593	250:$7.3400 100:$7.6800 25:$8.8500 10:$9.2800 1:$10.2700

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Availability

Stock:: 402
On Order:: 2385
Enter Quantity:

Current price of HGTG30N60B3D is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$6.48~~; ~~$6.48~~

10: ~~$5.85~~; ~~$58.50~~

25: ~~$5.58~~; ~~$139.50~~

100: ~~$4.85~~; ~~$485.00~~

250: ~~$4.63~~; ~~$1 157.50~~

500: ~~$4.22~~; ~~$2 110.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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HGTG30N60B3D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes