OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IPI023NE7N3 G

IPI023NE7N3 G
Mfr. #:
IPI023NE7N3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
IPI023NE7N3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-262-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
75 V
Id - Continuous Drain Current:
120 A
Rds On - Drain-Source Resistance:
2.3 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
155 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
300 W
Configuration:
Single
Tradename:
OptiMOS
Packaging:
Tube
Height:
9.45 mm
Length:
10.2 mm
Transistor Type:
1 N-Channel
Width:
4.5 mm
Brand:
Infineon Technologies
Fall Time:
22 nS
Product Type:
MOSFET
Rise Time:
26 nS
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
70 nS
Part # Aliases:
IPI023NE7N3GAKSA1 SP000641732
Unit Weight:
0.084199 oz
Tags
IPI023, IPI02, IPI0, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 75V 120A 3-Pin TO-262 Tube
*** Electronic Components
IGBT Transistors MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
***i-Key
MOSFET N-CH 75V 120A TO262-3
Part # Mfg. Description Stock Price
IPI023NE7N3 G
DISTI # IPI023NE7N3G-ND		Infineon Technologies AGMOSFET N-CH 75V 120A TO262-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
    IPI023NE7N3 G
    DISTI # 726-IPI023NE7N3G    		Infineon Technologies AGMOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
    RoHS: Compliant    		0
      IPI023NE7N3GInfineon Technologies AGPower Field-Effect Transistor, 120A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      RoHS: Compliant      		6946
      • 1000:$2.3200
      • 500:$2.4500
      • 100:$2.5500
      • 25:$2.6600
      • 1:$2.8600
      IPI023NE7N3 GInfineon Technologies AG 
      RoHS: Not Compliant      		1500
      • 1000:$2.3200
      • 500:$2.4500
      • 100:$2.5500
      • 25:$2.6600
      • 1:$2.8600
      Image Part # Description
      IPI023NE7N3 G

      Mfr.#: IPI023NE7N3 G

      OMO.#: OMO-IPI023NE7N3-G

      		 MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
      IPI023NE7N3

      Mfr.#: IPI023NE7N3

      OMO.#: OMO-IPI023NE7N3-1190

      		 New and Original
      IPI023NE7N3G

      Mfr.#: IPI023NE7N3G

      OMO.#: OMO-IPI023NE7N3G-1190

      		 Power Field-Effect Transistor, 120A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      IPI023NE7N3 G

      Mfr.#: IPI023NE7N3 G

      OMO.#: OMO-IPI023NE7N3-G-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
      Availability
      Stock:
      Available
      On Order:
      1500
      Enter Quantity:
      Current price of IPI023NE7N3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Start with
      Top