TSM60NB099PW C1G

TSM60NB099PW C1G
Mfr. #:
TSM60NB099PW C1G
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET MOSFET, Single, N-Ch SJ G2, 600V, 38A
Lifecycle:
New from this manufacturer.
Datasheet:
TSM60NB099PW C1G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TSM60NB099PW C1G DatasheetTSM60NB099PW C1G Datasheet (P4-P6)
ECAD Model:
More Information:
TSM60NB099PW C1G more Information
Product Attribute
Attribute Value
Manufacturer:
Taiwan Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
38 A
Rds On - Drain-Source Resistance:
86 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
62 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
329 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Transistor Type:
N-Channel Power MOSFET
Brand:
Taiwan Semiconductor
Fall Time:
25 ns
Product Type:
MOSFET
Rise Time:
24 ns
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
87 ns
Typical Turn-On Delay Time:
18 ns
Tags
TSM60NB09, TSM60NB0, TSM60NB, TSM60N, TSM60, TSM6, TSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Transistor MOSFET N-CH 600V 38A 3-Pin TO-247 Tube
***i-Key
MOSFET N-CHANNEL 600V 38A TO247
600V N-Channel Power MOSFETs
Taiwan Semiconductor 600V N-Channel Power MOSFETs are high-performance MOSFETs with small drain-source resistance (RDS(ON)). These 600V MOSFETs are constructed using a super-junction technology. The 600V N-channel power MOSFETs are 100% UIS and Rg tested, RoHS compliant, and halogen-free. Applications include PFC stage, server/telecom power, charging station, inverter, and power supply. 
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Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of TSM60NB099PW C1G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$8.33
$8.33
10
$7.50
$75.00
25
$6.82
$170.50
50
$6.51
$325.50
100
$6.16
$616.00
250
$5.66
$1 415.00
500
$5.16
$2 580.00
1000
$4.49
$4 490.00
2500
$4.23
$10 575.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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