CSD19531Q5AT

Mfr. #:: CSD19531Q5AT
Description:: MOSFET 100V,5.3mOhm,NexFET Power MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: CSD19531Q5AT Datasheet
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More Information:: CSD19531Q5AT more Information CSD19531Q5AT Product Details

Product Attribute
Attribute Value

Manufacturer:: Texas Instruments

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: VSONP-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 100 A

Rds On - Drain-Source Resistance:: 6.4 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.7 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 37 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 3.3 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: NexFET

Packaging:: Reel

Height:: 1 mm

Length:: 6 mm

Series:: CSD19531Q5A

Transistor Type:: 1 N-Channel

Type:: NexFET Power MOSFET

Width:: 4.9 mm

Brand:: Texas Instruments

Forward Transconductance - Min:: 82 S

Fall Time:: 5.2 ns

Product Type:: MOSFET

Rise Time:: 5.8 ns

Factory Pack Quantity:: 250

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 18.4 ns

Typical Turn-On Delay Time:: 6 ns

Tags: CSD19531, CSD1953, CSD19, CSD1, CSD

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CSD19531Q5AT Description

***as Instruments: 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm 8-VSONP -55 to 150

***nell: MOSFET, N-CHANNEL, 100V, 100A, VSON-8; Polarité transistor: Canal N; Courant de drain Id: 100A; Tension Vds max..: 100V; Résistance Rds(on): 0.0053ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 2.7V; Dissipation de puiss

***ark: Mosfet, N-Channel, 100V, 100A, Vson-8; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0053Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Rohs Compliant: Yes

***ure Electronics: N-Channel 100 V 7 mOhm OptiMOS3 Power-Transistor - PG-TDSON-8

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:90A; On Resistance Rds(On):0.0063Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V Rohs Compliant: Yes

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***icroelectronics: N-channel 100V - 0.019Y - 80A - TO-220 - D2PAK - I2PAK

***et: Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: N-Channel 100 V 0.023 O Surface Mount STripFET II Power MosFet - D2PAK

***r Electronics: Power Field-Effect Transistor, 80A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 100V, 80A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power

***Yang: Trans MOSFET N-CH 75V 85A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***ure Electronics: Single N-Channel 75 V 160 W 118 nC PowerTrench Surface Mount Mosfet - TO-263-3

***emi: N-Channel PowerTrench® MOSFET 75V, 85A, 8.8mΩ

***r Electronics: Power Field-Effect Transistor, 85A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N CH, 75V, 85A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***(Formerly Allied Electronics): AUIRFS3607 N-channel MOSFET Transistor; 80 A; 75 V; 3-Pin D2PAK

***ernational Rectifier: Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package

***ical: Trans MOSFET N-CH Si 75V 80A Automotive 3-Pin(2+Tab) D2PAK Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: Mosfet, N Channel, 75V, 80A, D2Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.00734Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive; Exhaust; Injection

***nell: MOSFET, N-CH, 75V, 80A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.00734ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 140W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C

***ure Electronics: Single N-Channel 80 V 5.4 mOhm 52 nC OptiMOS Power Mosfet - D2PAK

***ow.cn: Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N CH, 80A, 80V, PG-TO263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Current Id Max:80A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control

***ark: MOSFET, N CH, 80V, 0.0026OHM, 76A, POWER 56-8; Transistor Polarity:N Channel; Co

***emi: N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 80V, 110A, 3.1mΩ

***ure Electronics: Dual N-Channel 80 V 5 mOhm 84 nC 125 W PowerTrench SMT Mosfet - PQFN-8

*** Stop Electro: Power Field-Effect Transistor, 24A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

***nell: MOSFET, N CH, 80V, 76A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)

***AS INTRUMENTS: This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

***AS INSTRUMENTS INCORPORATED: Typical RθJA = 40°C/W on a 1−inch2, 2-oz. Cu pad on a 0.06−inch thick FR4 PCB. Max RθJC = 1.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%

CSD19531Q5AT More Information

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Part #	Description	Stock	Price
CSD19531Q5AT DISTI # V39:1801_07248854	Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R RoHS: Compliant	1000	5000:$0.7094 2500:$0.7396 1000:$0.7934 500:$0.9439 250:$1.0589
CSD19531Q5AT DISTI # V98:2334_07248854	Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R RoHS: Compliant	272	250:$1.0882 100:$1.0996 25:$1.3650 10:$1.3794 1:$1.6202
CSD19531Q5AT DISTI # 296-37749-1-ND	MOSFET N-CH 100V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8267In Stock	100:$1.4888 10:$1.8530 1:$2.0500
CSD19531Q5AT DISTI # 296-37749-6-ND	MOSFET N-CH 100V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8267In Stock	100:$1.4888 10:$1.8530 1:$2.0500
CSD19531Q5AT DISTI # 296-37749-2-ND	MOSFET N-CH 100V 100A 8SON RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	8250In Stock	1250:$0.9315 750:$1.0150 500:$1.1242 250:$1.2848
CSD19531Q5AT DISTI # 31040823	Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R RoHS: Compliant	1000	1000:$0.8264 500:$1.0118 250:$1.1583
CSD19531Q5AT DISTI # 29476215	Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R RoHS: Compliant	272	250:$0.9896 100:$1.0996 25:$1.3650 10:$1.3794 9:$1.6202
CSD19531Q5AT DISTI # CSD19531Q5AT	Trans MOSFET N-CH 100V 16A 8-Pin 8VSON T/R (Alt: CSD19531Q5AT) RoHS: Compliant Min Qty: 250 Container: Tape and Reel	Asia - 0
CSD19531Q5AT DISTI # CSD19531Q5AT	Trans MOSFET N-CH 100V 16A 8-Pin 8VSON T/R - Tape and Reel (Alt: CSD19531Q5AT) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$0.8469 1000:$0.8059 1500:$0.7789 2500:$0.7529 5000:$0.7319
CSD19531Q5AT	Trans MOSFET N-CH 100V 16A 8-Pin 8VSON T/R - Tape and Reel RoHS: Compliant Container: Reel	Americas - 0
CSD19531Q5AT DISTI # 68X2366	MOSFET Transistor, N Channel, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V RoHS Compliant: Yes	8	1:$2.1300 10:$1.8400 25:$1.7200 50:$1.6200 100:$1.5000
CSD19531Q5A DISTI # 595-CSD19531Q5A	MOSFET 100V 5.3mOhm Pwr MOSFET RoHS: Compliant	3948	1:$1.5500 10:$1.3100 100:$1.0500 500:$0.9190 1000:$0.7620 2500:$0.7090 5000:$0.6830 10000:$0.6570
CSD19531Q5AT DISTI # 595-CSD19531Q5AT	MOSFET 100V,5.3mOhm,NexFET Power MOSFET RoHS: Compliant	490	1:$1.7200 10:$1.4600 100:$1.1700 250:$1.1700 500:$1.0300 1000:$0.8470 2500:$0.7890 5000:$0.7600

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CSD19531Q5AT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes