SIA426DJ-T1-GE3

Mfr. #:: SIA426DJ-T1-GE3
Manufacturer:: Vishay
Description:: MOSFET N-CH 20V 4.5A SC70-6
Lifecycle:: New from this manufacturer.
Datasheet:: SIA426DJ-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Vishay Siliconix

Product Category: FETs - Single

Series: TrenchFETR

Packaging: Digi-ReelR Alternate Packaging

Part-Aliases: SIA426DJ-GE3

Mounting-Style: SMD/SMT

Package-Case: PowerPAKR SC-70-6

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 1 Channel

Supplier-Device-Package: PowerPAKR SC-70-6 Single

Configuration: Single Quad Drain Dual Source

FET-Type: MOSFET N-Channel, Metal Oxide

Power-Max: 19W

Transistor-Type: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 20V

Input-Capacitance-Ciss-Vds: 1020pF @ 10V

FET-Feature: Standard

Current-Continuous-Drain-Id-25°C: 4.5A (Tc)

Rds-On-Max-Id-Vgs: 23.6 mOhm @ 9.9A, 10V

Vgs-th-Max-Id: 1.5V @ 250μA

Gate-Charge-Qg-Vgs: 27nC @ 10V

Pd-Power-Dissipation: 3.5 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 11 ns

Rise-Time: 11 ns

Vgs-Gate-Source-Voltage: 12 V

Id-Continuous-Drain-Current: 4.5 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Rds-On-Drain-Source-Resistance: 23.6 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 27 ns

Typical-Turn-On-Delay-Time: 12 ns

Channel-Mode: Enhancement

Tags: SIA426, SIA42, SIA4, SIA

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA426DJ-T1-GE3 Description

***ure Electronics: N-Channel 20 V 23.6 mO 27 nC SMT TrenchFET Power Mosfet - PowerPAK SC-70-6L

***et: Trans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R

***i-Key: MOSFET N-CH 20V 4.5A SC70-6

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:4500mA; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.0361ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.5V; Power Dissipation, Pd:3.5W ;RoHS Compliant: Yes

Market price

Part #	Mfg.	Description	Stock
SIA426DJ-T1-GE3 DISTI # SIA426DJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 4.5A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SIA426DJ-T1-GE3 DISTI # SIA426DJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 4.5A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SIA426DJ-T1-GE3 DISTI # SIA426DJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 4.5A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SIA426DJ-T1-GE3 DISTI # 16P3617	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 4.5A, SC-70, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0361ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.5V RoHS Compliant: Yes	0
SIA426DJ-T1-GE3 DISTI # 781-SIA426DJ-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs PowerPAK SC-70 RoHS: Compliant	0

Image	Part #	Description
	Mfr.#: SIA426DJ-T1-GE3 OMO.#: OMO-SIA426DJ-T1-GE3	MOSFET 20V Vds 12V Vgs PowerPAK SC-70
	Mfr.#: SIA426DJ OMO.#: OMO-SIA426DJ-1190	New and Original
	Mfr.#: SIA426DJ-T1-GE3 OMO.#: OMO-SIA426DJ-T1-GE3-VISHAY	MOSFET N-CH 20V 4.5A SC70-6
	Mfr.#: SIA426DJT1GE3 OMO.#: OMO-SIA426DJT1GE3-1190	New and Original

SIA426DJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes