SIJ470DP-T1-GE3

Mfr. #:: SIJ470DP-T1-GE3
Manufacturer:: Vishay
Description:: IGBT Transistors MOSFET 100V 9.1mOhm@10V 58.8A N-CH
Lifecycle:: New from this manufacturer.
Datasheet:: SIJ470DP-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SIJ470DP-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: Vishay / Siliconix

Product Category: Transistors - FETs, MOSFETs - Single

Series: Power MOSFET

Packaging: Reel

Unit-Weight: 0.017870 oz

Mounting-Style: SMD/SMT

Tradename: ThunderFET TrenchFET

Package-Case: SO-8

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 56.8 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 7 ns

Rise-Time: 8 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 58.8 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Vgs-th-Gate-Source-Threshold-Voltage: 3.5 V

Rds-On-Drain-Source-Resistance: 9.1 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 22 ns

Typical-Turn-On-Delay-Time: 12 ns

Qg-Gate-Charge: 36.9 nC

Channel-Mode: Enhancement

Tags: SIJ470, SIJ47, SIJ4, SIJ

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIJ470DP-T1-GE3 Description

***ure Electronics: N-Channel 100 V 9.1 mOhm 56.8 W SMT ThunderFET Mosfet - PowerPAK SO-8

***ical: Trans MOSFET N-CH 100V 17.4A 5-Pin(4+Tab) PowerPAK SO

***i-Key: MOSFET N-CH 100V 58.8A PPAK SO-8

SIJ470DP-T1-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

ThunderFET® Power MOSFETs: Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.

Market price

Part #	Mfg.	Description	Stock	Price
SIJ470DP-T1-GE3 DISTI # SIJ470DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 58.8A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	964In Stock	1000:$0.7988 500:$1.0118 100:$1.3046 10:$1.6510 1:$1.8600
SIJ470DP-T1-GE3 DISTI # SIJ470DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 58.8A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	964In Stock	1000:$0.7988 500:$1.0118 100:$1.3046 10:$1.6510 1:$1.8600
SIJ470DP-T1-GE3 DISTI # SIJ470DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 58.8A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.7238
SIJ470DP-T1-GE3 DISTI # SIJ470DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 17.4A 5-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIJ470DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	6000:$0.6839 12000:$0.6629 18000:$0.6359 30000:$0.6189 60000:$0.6019
SIJ470DP-T1-GE3 DISTI # 78-SIJ470DP-T1-GE3	Vishay Intertechnologies	MOSFET 100V 9.1mOhm@10V 58.8A N-CH RoHS: Compliant	4267	1:$1.6500 10:$1.3600 100:$1.0400 500:$0.8940 1000:$0.7850 3000:$0.7840
SIJ470DPT1GE3	Vishay Intertechnologies	Power Field-Effect Transistor RoHS: Compliant	Europe - 6000
SIJ470DP-T1-GE3	Vishay Intertechnologies	MOSFET 100V 9.1mOhm@10V 58.8A N-CH RoHS: Compliant	Americas -	3000:$0.6580 12000:$0.5920

Image	Part #	Description
	Mfr.#: SIJ470DP-T1-GE3 OMO.#: OMO-SIJ470DP-T1-GE3	MOSFET 100V 9.1mOhm@10V 58.8A N-CH
	Mfr.#: SIJ470DP-T1-GE3 OMO.#: OMO-SIJ470DP-T1-GE3-VISHAY	IGBT Transistors MOSFET 100V 9.1mOhm@10V 58.8A N-CH
	Mfr.#: SIJ470DP OMO.#: OMO-SIJ470DP-1190	New and Original
	Mfr.#: SIJ470DPT1GE3 OMO.#: OMO-SIJ470DPT1GE3-1190	Power Field-Effect Transisto

SIJ470DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes