PSMN1R7-30YL,115

Mfr. #:: PSMN1R7-30YL,115
Manufacturer:: Nexperia
Description:: MOSFET <=30V N CH TRENCHFET
Lifecycle:: New from this manufacturer.
Datasheet:: PSMN1R7-30YL,115 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
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More Information:: PSMN1R7-30YL,115 more Information

Product Attribute
Attribute Value

Manufacturer:: Nexperia

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: LFPAK56-5

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 100 A

Rds On - Drain-Source Resistance:: 1.7 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 109 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 1.1 mm

Length:: 5 mm

Transistor Type:: 1 N-Channel

Width:: 4.1 mm

Brand:: Nexperia

Fall Time:: 34 ns

Product Type:: MOSFET

Rise Time:: 72 ns

Factory Pack Quantity:: 1500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 76 ns

Typical Turn-On Delay Time:: 46 ns

Part # Aliases:: PSMN1R7-30YL T/R

Tags: PSMN1R7-3, PSMN1R7, PSMN1R, PSMN1, PSMN, PSM

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PSMN1R7-30YL,115 Ratings and Reviews

N***v

More than two months rode to mo

2019-01-20

A***a

Great store. Fast delivery, quality goods.

2019-05-30

I***i

What you need came quickly

2019-06-10

PSMN1R7-30YL,115 Description

***Components: Supplied as a Tape, N-Channel MOSFET, 100 A, 30 V, 4-Pin SOT-669 Nexperia PSMN1R7-30YL,115

***peria: PSMN1R7-30YL - N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK

***ure Electronics: N-Channel 30 V 2.4 mOhm 36.2 nC Surface Mont Logic Level Mosfet - LFPAK56

***ical: Trans MOSFET N-CH 30V 100A 5-Pin (4+Tab) LFPAK T/R

***et: Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R

***i-Key: MOSFET N-CH 30V 100A LFPAK

***ment14 APAC: MOSFET, N CH, 30V, 100A, 4-SOT-669; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:100A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):1.29mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.7V ;RoHS Compliant: Yes

***nell: MOSFET, CANALE N 30V 100A SOT669; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.00129ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:109W; Modello Case Transistor:SOT-669; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:15A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Resistenza Stato On Max:1.7mohm; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:30V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Dispositivo a Montaggio Superficiale

PSMN1R7-30YL,115 More Information

PSMN N-Channel MOSFETs: Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.

PSMN MOSFETs in LFPAK Package: Nexperia PSMN MOSFETs in LFPAK Package are logic level N-channel devices in an LFPAK package qualified to 150ºC. These MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The PSMN MOSFETs in LFPAK feature advanced TrenchMOS architecture for low RDSon and low gate charge. These PSMN MOSFETs in LFPAK also provide high-efficiency gains in switching power converters.

Market price

Part #	Mfg.	Description	Stock	Price
PSMN1R7-30YL,115 DISTI # V72:2272_06540863	Nexperia	<=30V N CH TRENCHFET	0
PSMN1R7-30YL,115 DISTI # 1727-4162-1-ND	Nexperia	MOSFET N-CH 30V 100A LFPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	513In Stock	500:$0.5622 100:$0.6806 10:$0.8730 1:$0.9800
PSMN1R7-30YL,115 DISTI # 1727-4162-6-ND	Nexperia	MOSFET N-CH 30V 100A LFPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	513In Stock	500:$0.5622 100:$0.6806 10:$0.8730 1:$0.9800
PSMN1R7-30YL,115 DISTI # 1727-4162-2-ND	Nexperia	MOSFET N-CH 30V 100A LFPAK RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR)	Temporarily Out of Stock	7500:$0.4655 3000:$0.4900 1500:$0.5250
PSMN1R730YL,115 DISTI # PSMN1R7-30YL,115	Nexperia	Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN1R7-30YL,115) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.4209 15000:$0.4319 9000:$0.4429 6000:$0.4539 3000:$0.4599
PSMN1R730YL,115 DISTI # PSMN1R7-30YL115	Nexperia	Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R - Bulk (Alt: PSMN1R7-30YL115) RoHS: Not Compliant Min Qty: 715 Container: Bulk	Americas - 0	7150:$0.4209 3575:$0.4319 2145:$0.4429 1430:$0.4539 715:$0.4599
PSMN1R730YL,115 DISTI # PSMN1R7-30YL,115	Nexperia	Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN1R7-30YL,115) RoHS: Compliant Min Qty: 1500 Container: Tape and Reel	Europe - 0	15000:€0.4199 9000:€0.4519 6000:€0.4899 3000:€0.5339 1500:€0.6529
PSMN1R7-30YL,115 DISTI # 04R7688	Nexperia	N CHANNEL MOSFET, 30V, 100A,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):1.29mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,No. of Pins:4Pins RoHS Compliant: Yes	2924	1000:$0.5300 500:$0.6730 250:$0.7170 100:$0.7610 50:$0.8370 25:$0.9130 10:$0.9900 1:$1.1600
PSMN1R7-30YL,115 DISTI # 771-PSMN1R7-30YL-T/R	Nexperia	MOSFET <=30V N CH TRENCHFET RoHS: Compliant	2581	1:$1.1500 10:$0.9800 100:$0.7530 500:$0.6660 1000:$0.5250
PSMN1R7-30YL115	NXP Semiconductors	Now Nexperia PSMN1R7-30YL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK RoHS: Not Compliant	9940	1000:$0.4600 500:$0.4900 100:$0.5100 25:$0.5300 1:$0.5700
PSMN1R7-30YL,115	NXP Semiconductors		54
PSMN1R7-30YL,115 DISTI # 7982912P	Nexperia	LOGIC-LEVEL MOSFET N-CH. 30V 100A SOT669, RL	990	50:£0.6280 25:£0.6500
PSMN1R7-30YL.115 DISTI # PSMN1R7-30YL.115	Nexperia	Transistor: N-MOSFET,unipolar,30V,100A,109W,PowerSO8	1242	500:$0.5200 100:$0.5600 25:$0.6200 5:$0.7700 1:$0.8900
PSMN1R7-30YL,115 DISTI # 1699701	Nexperia	MOSFET, N CH 30V 100A SOT669	3263	500:£0.5060 250:£0.5520 100:£0.5980 10:£0.8360 1:£1.0400
PSMN1R7-30YL,115 DISTI # 1699701RL	Nexperia	MOSFET, N CH 30V 100A SOT669 RoHS: Compliant	0	500:$0.8480 100:$1.0300 10:$1.3200 1:$1.4800
PSMN1R7-30YL,115 DISTI # 1699701	Nexperia	MOSFET, N CH 30V 100A SOT669 RoHS: Compliant	2924	500:$0.8480 100:$1.0300 10:$1.3200 1:$1.4800

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Availability

Stock:: Available
On Order:: 1985
Enter Quantity:

Current price of PSMN1R7-30YL,115 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.15~~; ~~$1.15~~

10: ~~$0.98~~; ~~$9.80~~

100: ~~$0.75~~; ~~$75.30~~

500: ~~$0.67~~; ~~$333.00~~

1000: ~~$0.52~~; ~~$525.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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