BSH205G2 20 V, P-Channel Trench MOSFET

By Nexperia 130

BSH205G2 20 V, P-Channel Trench MOSFET

Nexperia offers their P-channel, enhancement mode field-effect transistor (FET) in a small, SOT23 (TO-236AB), surface-mounted device (SMD), plastic package using trench MOSFET technology.

Benefits
  • Low threshold voltage
  • Enhanced power dissipation capability of 890 mW
  • Low on-state resistance
  • Trench MOSFET technology
Applications    
  • Relay drivers
  • High-speed line drivers
 
  • High-side load switches
  • Switching circuits

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