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IXYX100N120C3

IXYX100N120C3
Mfr. #:
IXYX100N120C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
Lifecycle:
New from this manufacturer.
Datasheet:
IXYX100N120C3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYX100N120C3 DatasheetIXYX100N120C3 Datasheet (P4-P6)
ECAD Model:
More Information:
IXYX100N120C3 more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247PLUS-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
2.9 V
Maximum Gate Emitter Voltage:
30 V
Continuous Collector Current at 25 C:
188 A
Pd - Power Dissipation:
1150 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
IXYX100N120C3
Packaging:
Tube
Continuous Collector Current Ic Max:
188 A
Brand:
IXYS
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
30
Subcategory:
IGBTs
Tradename:
XPT
Unit Weight:
1.340411 oz
Tags
IXYX10, IXYX1, IXYX, IXY
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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IGBT, SINGLE, 1.2KV, 82A, TO-247AD; DC Collector Current: 82A; Collector Emitter Saturation Voltage Vce(on): 3.2V; Power Dissipation Pd: 1.25kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No.
***ark
Igbt, Npn, 1.2Kv, 82A, To-247Ad; Continuous Collector Current:82A; Collector Emitter Saturation Voltage:3.2V; Power Dissipation:1.25Kw; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes
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Product Description Demo for Development.
***nell
IGBT, SINGLE, 1.2KV, 160A, TO-247-3; DC Collector Current: 160A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 454W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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1200V Low VCEon Trench Discrete IGBT in a TO-247AD package
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IGBT, 1200V, 140A, TO-247AC; DC Collector Current: 140A; Collector Emitter Saturation Voltage Vce(on): 1.2kV; Power Dissipation Pd: 556W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AC; No. of Pins
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Trans IGBT Chip N-CH 1200V 160A 454000mW 3-Pin(3+Tab) TO-247 Tube
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IGBT, Ultra Field stop - 1200V 40A, Low VCEsat
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IGBT, SINGLE, 1.2KV, 160A, TO-247-3; DC Collector Current: 160A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 454W; Collector Emitter Voltage V(br)ceo: 1.2k; Available until stocks are exhausted
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Part # Mfg. Description Stock Price
IXYX100N120C3
DISTI # V36:1790_15876700		IXYS CorporationHIGH-SPEED IGBT0
    IXYX100N120C3
    DISTI # IXYX100N120C3-ND    		IXYS CorporationIGBT 1200V 188A 1150W PLUS247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		5In Stock
    • 510:$13.6568
    • 120:$16.0114
    • 30:$17.4243
    • 10:$18.8370
    • 1:$20.7200
    IXYX100N120C3
    DISTI # 747-IXYX100N120C3    		IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
    RoHS: Compliant    		258
    • 1:$19.7300
    • 10:$17.9400
    • 25:$16.6000
    • 50:$15.6400
    • 100:$15.2500
    • 250:$13.9000
    • 500:$13.0100
    IXYX100N120C3
    DISTI # 8080225P    		IXYS CorporationIGBT N-CH 1200V 100A XPT GENX3 PLUS247, TU90
    • 90:£13.0200
    • 30:£13.7100
    • 10:£14.3000
    • 5:£14.9300
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    OMO.#: OMO-UCC28C43QDRQ1

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    Availability
    Stock:
    192
    On Order:
    2175
    Enter Quantity:
    Current price of IXYX100N120C3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $19.73
    $19.73
    10
    $17.94
    $179.40
    25
    $16.60
    $415.00
    50
    $15.64
    $782.00
    100
    $15.25
    $1 525.00
    250
    $13.90
    $3 475.00
    500
    $13.01
    $6 505.00
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