2N2432UB

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-18-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

30 V

Collector- Base Voltage VCBO:

30 V

Collector-Emitter Saturation Voltage:

0.15 mV

Maximum DC Collector Current:

100 mA

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 175 C

DC Current Gain hFE Max:

400

Packaging:

Waffle

Brand:

Microchip / Microsemi

DC Collector/Base Gain hfe Min:

30

Pd - Power Dissipation:

600 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1

Subcategory:

Transistors

Tags

2N2432, 2N243, 2N24, 2N2