G10N60RUFD,SGH10N60RUFDT

Mfr. #:: G10N60RUFD,SGH10N60RUFDT
Manufacturer:: ON Semiconductor
Description:
Lifecycle:: New from this manufacturer.
Datasheet:: G10N60RUFD,SGH10N60RUFDT Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: G10N60RUFD, G10N60RUF, G10N60R, G10N6, G10N, G10

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Part #	Mfg.	Description	Stock	Price
HGTG10N120BND DISTI # HGTG10N120BND-ND	ON Semiconductor	IGBT 1200V 35A 298W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	807In Stock	1350:$2.1344 900:$2.5079 450:$2.7809 10:$3.5420 1:$3.9300
HGTG10N120BND DISTI # HGTG10N120BND	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 1	Europe - 0	1:€1.6900 10:€1.5900 25:€1.5900 50:€1.4900 100:€1.4900 500:€1.3900 1000:€1.3900
HGTG10N120BND DISTI # HGTG10N120BND	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450	Asia - 0	450:$2.3794 900:$2.2879 1350:$2.2031 2250:$2.1245 4500:$2.0512 11250:$1.9828 22500:$1.9503
HGTG10N120BND DISTI # HGTG10N120BND	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$1.7900 900:$1.7900 1800:$1.7900 2700:$1.7900 4500:$1.6900
HGTG10N120BND DISTI # 98B1928	ON Semiconductor	SINGLE IGBT, 1.2KV, 35A,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	0	500:$2.4200 250:$2.6800 100:$2.8100 50:$2.9500 25:$3.0800 10:$3.2200 1:$3.7700
HGTG10N120BND. DISTI # 16AC0004	Fairchild Semiconductor Corporation	DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes	0	2700:$2.4900 1:$2.5900
HGTG10N120BND DISTI # 512-HGTG10N120BND	ON Semiconductor	IGBT Transistors 35A 1200V N-Ch RoHS: Compliant	796	1:$3.6200 10:$3.0700 100:$2.6600 250:$2.5300 500:$2.2700 1000:$1.9100 2500:$1.8200
HGTG10N120BND_Q DISTI # 512-HGTG10N120BND_Q	ON Semiconductor	IGBT Transistors 35A 1200V N-Ch RoHS: Not compliant	0
HGTG10N120BND	ON Semiconductor	HGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247 RoHS: Compliant	50Tube	5:$2.9200 25:$1.9900 50:$1.8300 250:$1.5100
G10N120BN	Harris Semiconductor		20
HGTG10N120BN	Harris Semiconductor		45
HGTG10N120BND	Harris Semiconductor		20
HGTG10N120BND	Harris Semiconductor		23
HGTG10N120BND DISTI # HGTG10N120BND	ON Semiconductor	Transistor: IGBT,1.2kV,17A,298W,TO247-3	326	1:$3.5500 3:$3.1500 10:$2.6800 30:$2.3200 150:$2.1000
HGTG10N120BND	Fairchild Semiconductor Corporation	RoHS: Compliant	Europe - 1130
HGTG10N120BND DISTI # XSFP00000002029	Fairchild Semiconductor Corporation	N-Channel 60 V 17.2 A 42 mOhm QFET Mosfet - I-PAK-3 RoHS: Compliant	1218 in Stock0 on Order	1218:$2.5500 72:$2.8000

G10N60RUFD,SGH10N60RUFDT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes