NSBC113EPDXV6T1G

Mfr. #:: NSBC113EPDXV6T1G
Manufacturer:: ON Semiconductor
Description:: Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
Lifecycle:: New from this manufacturer.
Datasheet:: NSBC113EPDXV6T1G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: Bipolar Transistors - Pre-Biased

RoHS:: Y

Configuration:: Dual

Transistor Polarity:: NPN

Typical Input Resistor:: 1 kOhms

Typical Resistor Ratio:: 1

Mounting Style:: SMD/SMT

Package / Case:: SOT-563-6

DC Collector/Base Gain hfe Min:: 3

Collector- Emitter Voltage VCEO Max:: 50 V

Continuous Collector Current:: 100 mA

Peak DC Collector Current:: 100 mA

Pd - Power Dissipation:: 357 mW

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Series:: NSBC113EPDXV6

Packaging:: Reel

DC Current Gain hFE Max:: 3

Height:: 0.55 mm

Length:: 1.6 mm

Width:: 1.2 mm

Brand:: ON Semiconductor

Product Type:: BJTs - Bipolar Transistors - Pre-Biased

Factory Pack Quantity:: 4000

Subcategory:: Transistors

Unit Weight:: 0.000106 oz

Tags: NSBC113, NSBC11, NSBC, NSB

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NSBC113EPDXV6T1G Description

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***ical: Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R

***emi: 50V Dual Bipolar Digital Transistor

***ark: Brt Transistor, 50V, 1K/1Kohm, Sot-563-6; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes

***ical: Trans Digital BJT NPN 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

***emi: 50V Dual NPN Bipolar Digital Transistor

***ark: Brt Transistor, 50V, 1K/1Kohm, Sot-563-6; Transistor Polarity:dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes

***ical: Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R

*** Stop Electro: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***ure Electronics: Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital

***emi: Complementary Bipolar Digital Transistor (BRT)

***ment14 APAC: Transistor, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous

***ark: Brt Transistor, 50V, 47K/10Kohm, Sot-553; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes

***nell: TRANS, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***th Star Micro: The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series two complementary BRT devices are housed in the SOT-563 package which is ideal for low power surface mount applications where board space is at a premium.

***ical: Trans Digital BJT NPN 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R

***ure Electronics: NSBC114ED - 50 V 100 mA Dual NPN SMT Bias Resistor Transistor - SOT-563

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

***emi: Dual NPN Bipolar Digital Transistor (BRT)

***Yang: Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN

***nell: BRT TRANSISTOR, 50V, 10K; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 6Pins

Market price

Part #	Mfg.	Description	Stock	Price
NSBC113EPDXV6T1G DISTI # NSBC113EPDXV6T1GOSTR-ND	ON Semiconductor	TRANS PREBIAS NPN/PNP SOT563 RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	4000In Stock	4000:$0.1040
NSBC113EPDXV6T1G DISTI # NSBC113EPDXV6T1GOSCT-ND	ON Semiconductor	TRANS PREBIAS NPN/PNP SOT563 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
NSBC113EPDXV6T1G DISTI # NSBC113EPDXV6T1GOSDKR-ND	ON Semiconductor	TRANS PREBIAS NPN/PNP SOT563 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
NSBC113EPDXV6T1G DISTI # NSBC113EPDXV6T1G	ON Semiconductor	Trans Digital BJT NPN/PNP 50V 0.1A 6-Pin SOT-363 T/R - Tape and Reel (Alt: NSBC113EPDXV6T1G) RoHS: Compliant Min Qty: 8000 Container: Reel	Americas - 0	8000:$0.0779 16000:$0.0769 24000:$0.0759 40000:$0.0749 80000:$0.0739
NSBC113EPDXV6T1G DISTI # 49X8950	ON Semiconductor	BRT TRANSISTOR, 50V, 1K/1KOHM, SOT-563-6,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:1kohm,Base-Emitter Resistor R2:1kohm,Resistor Ratio, R1 / R2:1(Ratio) RoHS Compliant: Yes	0	1:$0.4030 25:$0.3090 50:$0.2580 100:$0.2160 250:$0.1820 500:$0.1550 1000:$0.1260 2500:$0.1070
NSBC113EPDXV6T1G DISTI # 42K2317	ON Semiconductor	BRT TRANSISTOR, 50V, 1K/1KOHM, SOT-563-6,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:1kohm,Base-Emitter Resistor R2:1kohm,Resistor Ratio, R1 / R2:1(Ratio) RoHS Compliant: Yes	0	1:$0.1200
NSBC113EPDXV6T1G DISTI # 863-NSBC113EPDXV6T1G	ON Semiconductor	Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR RoHS: Compliant	3800	1:$0.3500 10:$0.2660 100:$0.1440 1000:$0.1080 4000:$0.0930 8000:$0.0870 24000:$0.0800 48000:$0.0770 100000:$0.0740
NSBC113EPDXV6T1G	ON Semiconductor	RoHS: Not Compliant	108000	1000:$0.0900 100:$0.1000 500:$0.1000 1:$0.1100 25:$0.1100

Image	Part #	Description
	Mfr.#: NSBC113EDXV6T1G OMO.#: OMO-NSBC113EDXV6T1G	Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
	Mfr.#: NSBC113EPDXV6T1G OMO.#: OMO-NSBC113EPDXV6T1G	Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
	Mfr.#: NSBC113EF3T5G OMO.#: OMO-NSBC113EF3T5G	Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B
	Mfr.#: NSBC113EDXV6T1 OMO.#: OMO-NSBC113EDXV6T1-ON-SEMICONDUCTOR	TRANS 2NPN PREBIAS 0.5W SOT563
	Mfr.#: NSBC113EDXV6T5 OMO.#: OMO-NSBC113EDXV6T5-ON-SEMICONDUCTOR	TRANS 2NPN PREBIAS 0.5W SOT563
	Mfr.#: NSBC113EPDXV6T1 OMO.#: OMO-NSBC113EPDXV6T1-ON-SEMICONDUCTOR	TRANS PREBIAS NPN/PNP SOT563
	Mfr.#: NSBC113EF3T5G OMO.#: OMO-NSBC113EF3T5G-ON-SEMICONDUCTOR	Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B
	Mfr.#: NSBC113EPDXV6T1G OMO.#: OMO-NSBC113EPDXV6T1G-ON-SEMICONDUCTOR	Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
	Mfr.#: NSBC113EDXV6T1G OMO.#: OMO-NSBC113EDXV6T1G-ON-SEMICONDUCTOR	Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR

NSBC113EPDXV6T1G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes