SIS427EDN-T1-GE3

SIS427EDN-T1-GE3
Mfr. #:
SIS427EDN-T1-GE3
Manufacturer:
Vishay
Description:
RF Bipolar Transistors MOSFET -30V 10.6mOhm@-10V -50A P-CH
Lifecycle:
New from this manufacturer.
Datasheet:
SIS427EDN-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
VISHAY
Product Category
FETs - Single
Series
TrenchFETR
Packaging
Digi-ReelR Alternate Packaging
Mounting-Style
SMD/SMT
Tradename
TrenchFET
Package-Case
PowerPAKR 1212-8
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
1 Channel
Supplier-Device-Package
PowerPAKR 1212-8
Configuration
Single
FET-Type
MOSFET P-Channel, Metal Oxide
Power-Max
52W
Transistor-Type
1 P-Channel
Drain-to-Source-Voltage-Vdss
30V
Input-Capacitance-Ciss-Vds
1930pF @ 15V
FET-Feature
Standard
Current-Continuous-Drain-Id-25°C
50A (Tc)
Rds-On-Max-Id-Vgs
10.6 mOhm @ 11A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Gate-Charge-Qg-Vgs
66nC @ 10V
Pd-Power-Dissipation
52 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
12 ns
Rise-Time
40 ns
Vgs-Gate-Source-Voltage
25 V
Id-Continuous-Drain-Current
- 50 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Vgs-th-Gate-Source-Threshold-Voltage
- 2.5 V
Rds-On-Drain-Source-Resistance
17.7 mOhms
Transistor-Polarity
P-Channel
Typical-Turn-Off-Delay-Time
28 ns
Typical-Turn-On-Delay-Time
45 ns
Qg-Gate-Charge
43.5 nC
Forward-Transconductance-Min
32 S
Tags
SIS42, SIS4, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET P-CH 30V 15A 8-Pin PowerPAK 1212 T/R
***ment14 APAC
MOSFET, P CH, -30V, -50A, POWERPAK1212-8
***ark
N-CHANNEL 30-V (D-S) MOSFET
Part # Mfg. Description Stock Price
SIS427EDN-T1-GE3
DISTI # V72:2272_09216167
Vishay IntertechnologiesTrans MOSFET P-CH 30V 15A 8-Pin PowerPAK EP T/R
RoHS: Compliant
303
  • 250:$0.3636
  • 100:$0.3675
  • 25:$0.4569
  • 10:$0.4622
  • 1:$0.5479
SIS427EDN-T1-GE3
DISTI # SIS427EDN-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 30V 50A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
7895In Stock
  • 1000:$0.3263
  • 500:$0.4079
  • 100:$0.5506
  • 10:$0.7140
  • 1:$0.8200
SIS427EDN-T1-GE3
DISTI # SIS427EDN-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 30V 50A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
7895In Stock
  • 1000:$0.3263
  • 500:$0.4079
  • 100:$0.5506
  • 10:$0.7140
  • 1:$0.8200
SIS427EDN-T1-GE3
DISTI # SIS427EDN-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 30V 50A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 3000:$0.2871
SIS427EDN-T1-GE3
DISTI # 27066163
Vishay IntertechnologiesTrans MOSFET P-CH 30V 15A 8-Pin PowerPAK EP T/R
RoHS: Compliant
303
  • 250:$0.3636
  • 100:$0.3675
  • 28:$0.4569
SIS427EDN-T1-GE3
DISTI # SIS427EDN-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 15A 8-Pin PowerPAK 1212 T/R (Alt: SIS427EDN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 15000
  • 3000:$3.4500
  • 6000:$2.3793
  • 9000:$1.7692
  • 15000:$1.4375
  • 30000:$1.3019
  • 75000:$1.2546
  • 150000:$1.2105
SIS427EDN-T1-GE3
DISTI # SIS427EDN-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 15A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS427EDN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.2619
  • 6000:$0.2539
  • 12000:$0.2429
  • 18000:$0.2369
  • 30000:$0.2299
SIS427EDN-T1-GE3
DISTI # 99W9578
Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET0
  • 1:$0.3100
  • 5000:$0.3030
  • 10000:$0.2790
  • 20000:$0.2610
  • 30000:$0.2430
  • 50000:$0.2330
SIS427EDN-T1-GE3
DISTI # 78-SIS427EDN-T1-GE3
Vishay IntertechnologiesMOSFET -30V Vds 25V Vgs PowerPAK 1212-8
RoHS: Compliant
3626
  • 1:$0.7200
  • 10:$0.5750
  • 100:$0.4360
  • 500:$0.3600
  • 1000:$0.2880
  • 3000:$0.2610
SIS427EDN-T1-GE3
DISTI # C1S803604990270
Vishay IntertechnologiesMOSFETs303
  • 250:$0.3636
  • 100:$0.3675
  • 25:$0.4569
  • 10:$0.4622
Image Part # Description
SIS427EDN-T1-GE3

Mfr.#: SIS427EDN-T1-GE3

OMO.#: OMO-SIS427EDN-T1-GE3

MOSFET -30V Vds 25V Vgs PowerPAK 1212-8
SIS427EDN-T1-GE3

Mfr.#: SIS427EDN-T1-GE3

OMO.#: OMO-SIS427EDN-T1-GE3-VISHAY

RF Bipolar Transistors MOSFET -30V 10.6mOhm@-10V -50A P-CH
SIS427EDN-T1-E3

Mfr.#: SIS427EDN-T1-E3

OMO.#: OMO-SIS427EDN-T1-E3-1190

New and Original
Availability
Stock:
Available
On Order:
2500
Enter Quantity:
Current price of SIS427EDN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.34
$0.34
10
$0.33
$3.28
100
$0.31
$31.04
500
$0.29
$146.55
1000
$0.28
$275.90
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Top