IPB097N08N3GATMA1

Mfr. #:: IPB097N08N3GATMA1
Manufacturer:: Rochester Electronics, LLC
Description:: Trans MOSFET N-CH 80V 70A 3-Pin TO-263 T/R - Bulk (Alt: IPB097N08N3GATMA1)
Lifecycle:: New from this manufacturer.
Datasheet:: IPB097N08N3GATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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Tags: IPB097N08N3G, IPB097, IPB09, IPB0, IPB

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Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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IPB097N08N3GATMA1 Description

***p One Stop: Trans MOSFET N-CH 80V 70A 3-Pin(2+Tab) TO-263 T/R

***i-Key: N-CHANNEL POWER MOSFET

***ure Electronics: Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS Power Mosfet - D2PAK

***ow.cn: Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***ment14 APAC: MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:100V; On Resistance

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS

***nell: MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ure Electronics: Single N-Channel 60 V 9 mOhm 36 nC OptiMOS Power Mosfet - D2PAK

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO263-3, RoHS

***ment14 APAC: MOSFET, N CH, 50A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:71W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:71W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***et: Trans MOSFET N-CH 40V 70A 3-Pin(2+Tab) TO-263

***el Electronic: Power Field-Effect Transistor, 70A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

***ment14 APAC: MOSFET, N CH, 70A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ure Electronics: N-Channel 60 V 7 mOhm Surface Mount PowerTrench Mosfet D2PAK-3

***emi: N-Channel PowerTrench® MOSFET 60V, 80A, 7mΩ

***Yang: Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:175W; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-263; Power Dissipation Pd:175W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***emi: N-Channel PowerTrench® MOSFET, 40V, 50A, 8.5mΩ

***ure Electronics: N-Channel 40 V 50 A 8.5 mOhm Surface Mount PowerTrench® Mosfet -TO-263AB

*** Stop Electro: Power Field-Effect Transistor, 15A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***el Electronic: Chip Resistor - Surface Mount 910Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 910 OHM 1% 1/10W 0402

***ment14 APAC: MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Package / Case:D2-PAK; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

***rchild Semiconductor: This N–Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.

Market price

Part #	Mfg.	Description	Stock	Price
IPB097N08N3GATMA1 DISTI # IPB097N08N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 70A 3-Pin TO-263 T/R - Bulk (Alt: IPB097N08N3GATMA1) RoHS: Compliant Min Qty: 582 Container: Bulk	Americas - 0	5820:$0.5459 2910:$0.5559 1746:$0.5749 1164:$0.5969 582:$0.6189
IPB097N08N3 G DISTI # 726-IPB097N08N3G	Infineon Technologies AG	MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3 RoHS: Compliant	0
IPB097N08N3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 70A I(D), 80V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	15767	1000:$0.5700 500:$0.6000 100:$0.6200 25:$0.6500 1:$0.7000

Related products

Image	Part #	Description
	Mfr.#: IPB097N08N3 G OMO.#: OMO-IPB097N08N3-G	MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3
	Mfr.#: IPB097N08N3 OMO.#: OMO-IPB097N08N3-1190	New and Original
	Mfr.#: IPB097N08N3G OMO.#: OMO-IPB097N08N3G-1190	Trans MOSFET N-CH 80V 70A 3-Pin TO-263 T/R - Bulk (Alt: IPB097N08N3G)
	Mfr.#: IPB097N08N3GATMA1 OMO.#: OMO-IPB097N08N3GATMA1-1190	Trans MOSFET N-CH 80V 70A 3-Pin TO-263 T/R - Bulk (Alt: IPB097N08N3GATMA1)
	Mfr.#: IPB097N08N3GS OMO.#: OMO-IPB097N08N3GS-1190	New and Original
	Mfr.#: IPB097N08N3GXT OMO.#: OMO-IPB097N08N3GXT-1190	New and Original
	Mfr.#: IPB097N08N3 G OMO.#: OMO-IPB097N08N3-G-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3

Availability

Stock:: Available
On Order:: 1000
Enter Quantity:

Current price of IPB097N08N3GATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.94~~; ~~$0.94~~

10: ~~$0.90~~; ~~$8.98~~

100: ~~$0.85~~; ~~$85.05~~

500: ~~$0.80~~; ~~$401.65~~

1000: ~~$0.76~~; ~~$756.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB097N08N3G 5
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IPB097N08N3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes