IPB60R250CP

IPB60R250CP
Mfr. #:
IPB60R250CP
Manufacturer:
Rochester Electronics, LLC
Description:
Darlington Transistors MOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP
Lifecycle:
New from this manufacturer.
Datasheet:
IPB60R250CP Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
INFINEON
Product Category
FETs - Single
Series
CoolMOS CP
Packaging
Reel
Part-Aliases
IPB60R250CPATMA1 IPB60R250CPXT SP000358140
Unit-Weight
0.139332 oz
Mounting-Style
SMD/SMT
Tradename
CoolMOS
Package-Case
TO-252-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
104 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
12 ns
Rise-Time
17 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
12 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Resistance
250 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
110 ns
Typical-Turn-On-Delay-Time
40 ns
Channel-Mode
Enhancement
Tags
IPB60R2, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK T/R
***et
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) TO-263
***et Europe
Trans MOSFET N-CH 600V 12A 3-Pin TO-263 T/R
***o-Tech
MOSFET N-Channel 600V 12A CoolMOS3 TO263
***i-Key
MOSFET N-CH 650V 12A TO263-3
***ark
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Typ Voltage Vds:650V; Current, Id Cont:12A; On State Resistance:0.25ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:3V; Case Style:TO-263; ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:12A; On State Resistance:0.25ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; SVHC:Cobalt dichloride
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
Part # Mfg. Description Stock Price
IPB60R250CPATMA1
DISTI # IPB60R250CPATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 650V 12A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IPB60R250CP
    DISTI # IPB60R250CP
    Infineon Technologies AGTrans MOSFET N-CH 600V 12A 3-Pin TO-263 T/R (Alt: IPB60R250CP)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Asia - 1000
      IPB60R250CP
      DISTI # SP000358140
      Infineon Technologies AGTrans MOSFET N-CH 600V 12A 3-Pin TO-263 T/R (Alt: SP000358140)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape and Reel
      Europe - 0
      • 1000:€1.9900
      • 2000:€1.4900
      • 4000:€1.3900
      • 6000:€1.3900
      • 10000:€1.2900
      IPB60R250CPInfineon Technologies AGPower Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      44770
      • 1000:$1.6800
      • 500:$1.7700
      • 100:$1.8400
      • 25:$1.9200
      • 1:$2.0600
      IPB60R250CPATMA1Infineon Technologies AGPower Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      35000
      • 1000:$2.1800
      • 500:$2.2900
      • 100:$2.3900
      • 25:$2.4900
      • 1:$2.6800
      IPB60R250CP
      DISTI # 726-IPB60R250CP
      Infineon Technologies AGMOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP
      RoHS: Compliant
      449
      • 1:$3.3200
      • 10:$2.6700
      • 100:$2.4300
      • 250:$2.1900
      • 500:$1.9700
      • 1000:$1.6500
      • 2000:$1.5700
      • 5000:$1.4400
      IPB60R250CPATMA1
      DISTI # 726-IPB60R250CPATMA1
      Infineon Technologies AGMOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP
      RoHS: Compliant
      0
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        OMO.#: OMO-IPB60R180C7ATMA1-INFINEON-TECHNOLOGIES

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        Mfr.#: IPB60R190C6 (6R190C6)

        OMO.#: OMO-IPB60R190C6-6R190C6--1190

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        Availability
        Stock:
        Available
        On Order:
        1000
        Enter Quantity:
        Current price of IPB60R250CP is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $2.16
        $2.16
        10
        $2.05
        $20.52
        100
        $1.94
        $194.40
        500
        $1.84
        $918.00
        1000
        $1.73
        $1 728.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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