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IXFR120N20

IXFR120N20
Mfr. #:
IXFR120N20
Manufacturer:
Littelfuse
Description:
MOSFET 200V 105A
Lifecycle:
New from this manufacturer.
Datasheet:
IXFR120N20 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
105 A
Rds On - Drain-Source Resistance:
17 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
400 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
HyperFET
Packaging:
Tube
Height:
21.34 mm
Length:
16.13 mm
Series:
IXFR120N20
Transistor Type:
1 N-Channel
Width:
5.21 mm
Brand:
IXYS
Forward Transconductance - Min:
70 S
Fall Time:
35 ns
Product Type:
MOSFET
Rise Time:
65 ns
Factory Pack Quantity:
30
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
110 ns
Typical Turn-On Delay Time:
40 ns
Unit Weight:
0.186952 oz
Tags
IXFR12, IXFR1, IXFR, IXF
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 200V 105A 3-Pin(3+Tab) ISOPLUS 247
***ure Electronics
Single N-Channel 200 V 17 mOhm 400 W Power Mosfet - ISOPLUS247
***i-Key
MOSFET N-CH 200V 105A ISOPLUS247
***ource
HiPerFETTM Power MOSFETs ISOPLUS247
***ure Electronics
IPP120N20NFD Series 200 V 84 A OptiMOS™FD Power Transistor MOSFET - TO-220-3
***ical
Trans MOSFET N-CH 200V 84A Automotive 3-Pin(3+Tab) TO-220 Tube
***nell
MOSFET, N-CH, 200V, 84A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.0106ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
*** Stop Electro
Power Field-Effect Transistor, 84A I(D), 200V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
New OptiMOS Fast Diode (FD), Infineons latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. | Summary of Features: Improved hard commutation ruggedness; Optimized hard switching behavior; Industrys lowest R ds(on), Q g and Q rr; RoHS compliant - halogen free | Benefits: Highest system reliability; System cost reduction; Highest efficiency and power density; Easy-to-design products | Target Applications: Telecom; Class D audio amplifier; Motor control for 48-110V systems; Industrial power supplies; DC-AC inverter
***emi
N-Channel UltraFET Power MOSFET 150V, 75A, 16mΩ
***ure Electronics
N-Channel 150 V 0.016 Ohm Flange Mount UltraFET Power Mosfet - TO-247
***r Electronics
Power Field-Effect Transistor, 75A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ark
Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:500W; No. of Pins:3Pins RoHS Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***emi
N-Channel UltraFET® Power MOSFET 150V, 75A, 13mΩ
***ical
Trans MOSFET N-CH 150V 75A Automotive 3-Pin(3+Tab) TO-247 Tube
***ser
MOSFETs 75a, 150V, 0.016 Ohm N-Ch MOSFET
***i-Key Marketplace
MOSFET N-CH 150V 75A TO247-3
***el Electronic
IC WHITE LED DRIVER 40SSOP
***el Nordic
Contact for details
***ure Electronics
Single N-Channel 200 V 20 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3
*** Electronics
In a Pack of 2, N-Channel MOSFET, 76 A, 200 V, 3-Pin TO-220AB Infineon IRFB4127PBF
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 200V 76A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220 Polarity: N Power dissipation: 375 W
***(Formerly Allied Electronics)
MOSFET, N Ch., 200V, 76A, 21 MOHM, 110 NC, D2-PAK, Pb-Free
***roFlash
Power Field-Effect Transistor, 76A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N Channel Mosfet, 200V, 76A, To-220Ab; Channel Type:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:76A; Transistor Mounting:through Hole; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 200V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:200V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:76A; Package / Case:TO-220AB; Power Dissipation Pd:375W; Pulse Current Idm:300A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
***ure Electronics
Single N-Channel 250 V 17.5 mOhm 270 nC HEXFET® Power Mosfet - TO-247AC
*** Source Electronics
Trans MOSFET N-CH 250V 93A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 250V 93A TO-247AC
***ineon SCT
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***roFlash
Power Field-Effect Transistor, 93A I(D), 250V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, N-CH 250V 93A TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:250V; On Resistance Rds(on):17.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:520W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:93A; Package / Case:TO-247AC; Power Dissipation Pd:520W; Power Dissipation Pd:520W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:250V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Part # Mfg. Description Stock Price
IXFR120N20
DISTI # V36:1790_17758949		IXYS CorporationTrans MOSFET N-CH Si 200V 105A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		28
  • 10:$18.2290
  • 1:$18.3210
IXFR120N20
DISTI # IXFR120N20-ND		IXYS CorporationMOSFET N-CH 200V 105A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$16.6130
IXFR120N20
DISTI # 32728490		IXYS CorporationTrans MOSFET N-CH Si 200V 105A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		28
  • 10:$19.5962
  • 1:$19.7045
IXFR120N20
DISTI # 747-IXFR120N20		IXYS CorporationMOSFET 200V 105A
RoHS: Compliant		0
    IXFR120N20  2
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      Availability
      Stock:
      Available
      On Order:
      5000
      Enter Quantity:
      Current price of IXFR120N20 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      300
      $18.13
      $5 439.00
      510
      $16.75
      $8 542.50
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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