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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| IPB107N20N3GATMA1 DISTI # 33949729 | Infineon Technologies AG | Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1000 |
|
| IPB107N20N3GATMA1 DISTI # IPB107N20N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 200V 88A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 549In Stock |
|
| IPB107N20N3GATMA1 DISTI # IPB107N20N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 200V 88A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 549In Stock |
|
| IPB107N20N3GATMA1 DISTI # IPB107N20N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 200V 88A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | On Order |
|
| IPB107N20N3GATMA1 DISTI # V72:2272_06377982 | Infineon Technologies AG | Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 0 | |
| IPB107N20N3GATMA1 DISTI # IPB107N20N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB107N20N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB107N20N3GATMA1 DISTI # SP000676406 | Infineon Technologies AG | Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) TO-263 (Alt: SP000676406) RoHS: Compliant Min Qty: 1000 | Europe - 0 |
|
| IPB107N20N3GATMA1 DISTI # 79X1432 | Infineon Technologies AG | MOSFET, N-CH, 200V, 88A, TO-263- 3,Transistor Polarity:N Channel,Continuous Drain Current Id:88A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0096ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes | 791 |
|
| IPB107N20N3 G DISTI # 726-IPB107N20N3GXT | Infineon Technologies AG | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 RoHS: Compliant | 1687 |
|
| IPB107N20N3GATMA1 DISTI # 726-IPB107N20N3GATMA | Infineon Technologies AG | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 RoHS: Compliant | 31 |
|
| IPB107N20N3GATMA1 | Infineon Technologies AG | Single N-Channel 200 V 10.7 mOhm 65 nC OptiMOS Power Mosfet - D2PAK RoHS: Not Compliant | 1000Reel |
|
| IPB107N20N3GATMA1 DISTI # XSFP00000162127 | Infineon Technologies AG | RoHS: Compliant | 2000 in Stock0 on Order |
|
| IPB107N20N3GATMA1 DISTI # 2432725 | Infineon Technologies AG | MOSFET, N CH, 200V, 88A, TO-263-3 | 1805 |
|
| IPB107N20N3GATMA1 DISTI # 2432725RL | Infineon Technologies AG | MOSFET, N CH, 200V, 88A, TO-263-3 RoHS: Compliant | 0 |
|
| IPB107N20N3GATMA1 DISTI # 2432725 | Infineon Technologies AG | MOSFET, N CH, 200V, 88A, TO-263-3 RoHS: Compliant | 1757 |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: IPB107N20NAXT OMO.#: OMO-IPB107N20NAXT |
MOSFET N-Ch 200V 88A D2PAK-2 |
|
|
Mfr.#: IPB107N20NA OMO.#: OMO-IPB107N20NA |
MOSFET N-Ch 200V 88A D2PAK-2 |
|
|
Mfr.#: IPB107N20N3 G OMO.#: OMO-IPB107N20N3-G |
MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 |
|
|
Mfr.#: IPB107N20N3GATMA1 OMO.#: OMO-IPB107N20N3GATMA1 |
MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 |
|
Mfr.#: IPB107N20N3G OMO.#: OMO-IPB107N20N3G-1190 |
POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.0107OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB |
|
|
Mfr.#: IPB107N20NAXT OMO.#: OMO-IPB107N20NAXT-1190 |
MOSFET N-Ch 200V 88A D2PAK-2 |
|
|
Mfr.#: IPB107N20 OMO.#: OMO-IPB107N20-1190 |
New and Original |
|
|
Mfr.#: IPB107N20N3G , 2SD1949K- |
New and Original |
|
|
Mfr.#: IPB107N20N3GXT OMO.#: OMO-IPB107N20N3GXT-1190 |
New and Original |
|
|
Mfr.#: IPB107N20NA OMO.#: OMO-IPB107N20NA-1190 |
- Bulk (Alt: IPB107N20NA) |
