IPB107N20NAXT

IPB107N20NAXT
Mfr. #:
IPB107N20NAXT
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 200V 88A D2PAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
IPB107N20NAXT Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPB107N20NAXT more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
88 A
Rds On - Drain-Source Resistance:
9.6 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
87 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
300 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Fall Time:
11 ns
Product Type:
MOSFET
Rise Time:
26 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
41 ns
Typical Turn-On Delay Time:
18 ns
Part # Aliases:
IPB107N20NAATMA1 SP000877674
Unit Weight:
0.068654 oz
Tags
IPB107N20NA, IPB107N20N, IPB107, IPB10, IPB1, IPB
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Part # Mfg. Description Stock Price
IPB107N20NAATMA1
DISTI # V72:2272_06377302
Infineon Technologies AGTrans MOSFET N-CH 200V 88A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
27
  • 25:$6.3670
  • 10:$6.4970
  • 1:$7.2210
IPB107N20NAATMA1
DISTI # V36:1790_06377302
Infineon Technologies AGTrans MOSFET N-CH 200V 88A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$3.7610
  • 500000:$3.7630
  • 100000:$3.9100
  • 10000:$4.1500
  • 1000:$4.1890
IPB107N20NAATMA1
DISTI # IPB107N20NAATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 200V 88A TO263-3
Min Qty: 1
Container: Cut Tape (CT)
3895In Stock
  • 500:$4.9541
  • 100:$5.6892
  • 10:$6.8720
  • 1:$7.6100
IPB107N20NAATMA1
DISTI # IPB107N20NAATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 200V 88A TO263-3
Min Qty: 1
Container: Digi-Reel®
3895In Stock
  • 500:$4.9541
  • 100:$5.6892
  • 10:$6.8720
  • 1:$7.6100
IPB107N20NAATMA1
DISTI # IPB107N20NAATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 200V 88A TO263-3
Min Qty: 1000
Container: Tape & Reel (TR)
3000In Stock
  • 2000:$4.1271
  • 1000:$4.1892
IPB107N20NAATMA1
DISTI # 33145314
Infineon Technologies AGTrans MOSFET N-CH 200V 88A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 2000:$3.7144
  • 1000:$3.7703
IPB107N20NAATMA1
DISTI # 32020211
Infineon Technologies AGTrans MOSFET N-CH 200V 88A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
27
  • 25:$6.3670
  • 10:$6.4970
  • 2:$7.2210
IPB107N20NAATMA1
DISTI # IPB107N20NAATMA1
Infineon Technologies AGTrans MOSFET N-CH 200V 88A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB107N20NAATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$3.9430
  • 6000:$4.0144
  • 4000:$4.1541
  • 2000:$4.3099
  • 1000:$4.4713
IPB107N20NAATMA1
DISTI # SP000877674
Infineon Technologies AGTrans MOSFET N-CH 200V 88A 3-Pin(2+Tab) TO-263 (Alt: SP000877674)
Min Qty: 1000
Europe - 0
  • 10000:€3.6068
  • 6000:€3.7942
  • 4000:€4.1221
  • 2000:€4.3563
  • 1000:€4.6842
IPB107N20NAATMA1
DISTI # 50Y2007
Infineon Technologies AGMOSFET Transistor, N Channel, 88 A, 200 V, 0.0096 ohm, 10 V, 3 V RoHS Compliant: Yes
RoHS: Compliant
0
  • 500:$5.0000
  • 250:$5.3700
  • 100:$5.7400
  • 50:$6.1400
  • 25:$6.5400
  • 10:$6.9400
  • 1:$7.6800
IPB107N20NA
DISTI # 726-IPB107N20NA
Infineon Technologies AGMOSFET N-Ch 200V 88A D2PAK-2
RoHS: Compliant
8018
  • 1:$7.3800
  • 10:$6.6700
  • 25:$6.3600
  • 100:$5.5200
  • 250:$5.2700
  • 500:$4.8100
  • 1000:$4.1900
IPB107N20NAXT
DISTI # 726-IPB107N20NAATMA1
Infineon Technologies AGMOSFET N-Ch 200V 88A D2PAK-2
RoHS: Compliant
3739
  • 1:$7.3800
  • 10:$6.6700
  • 25:$6.3600
  • 100:$5.5200
  • 250:$5.2700
  • 500:$4.8100
  • 1000:$4.1900
IPB107N20NAATMA1
DISTI # 2480802
Infineon Technologies AGMOSFET, N-CH, 200V, 88A, TO-263-3
RoHS: Compliant
147
  • 500:$7.7900
  • 100:$8.9400
  • 10:$10.8000
  • 1:$11.9500
IPB107N20NAATMA1
DISTI # 2480802RL
Infineon Technologies AGMOSFET, N-CH, 200V, 88A, TO-263-3
RoHS: Compliant
0
  • 500:$7.7900
  • 100:$8.9400
  • 10:$10.8000
  • 1:$11.9500
IPB107N20NAATMA1
DISTI # 2480802RL
Infineon Technologies AGMOSFET, N-CH, 200V, 88A, TO-263-3
RoHS: Compliant
0
  • 250:£3.4600
  • 100:£5.2900
  • 50:£5.8400
  • 10:£6.3900
  • 5:£7.0700
  • 1:£7.6700
IPB107N20NAATMA1
DISTI # 2480802
Infineon Technologies AGMOSFET, N-CH, 200V, 88A, TO-263-3
RoHS: Compliant
15
  • 250:£3.4600
  • 100:£5.2900
  • 50:£5.8400
  • 10:£6.3900
  • 5:£7.0700
  • 1:£7.6700
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EVALUATION BOARD I.C.
Availability
Stock:
Available
On Order:
1986
Enter Quantity:
Current price of IPB107N20NAXT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$7.38
$7.38
10
$6.67
$66.70
25
$6.36
$159.00
100
$5.52
$552.00
250
$5.27
$1 317.50
500
$4.81
$2 405.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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