FDB016N04AL7

Mfr. #:: FDB016N04AL7
Manufacturer:: ON Semiconductor
Description:: MOSFET N-CH 40V 160A D2PAK-7
Lifecycle:: New from this manufacturer.
Datasheet:: FDB016N04AL7 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: FDB016N04AL7 more Information

Product Attribute
Attribute Value

Tags: FDB016, FDB01, FDB0, FDB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDB016N04AL7 Description

***ical: Trans MOSFET N-CH 40V 306A 7-Pin(6+Tab) D2PAK T/R

***Semiconductor: N-Channel PowerTrench® MOSFET 40V, 306A, 1.6mΩ

***Components: MOSFET N-CH 40V 306A POWERTRENCH D2PAK-7

***i-Key: MOSFET N-CH 40V 160A D2PAK-7

***ark: TAPE REEL/40V 1.6MOHM D2PAK-7L

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

FDB016N04AL7 More Information

N-Channel PowerTrench® MOSFETs: ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more

Market price

Part #	Mfg.	Description	Stock	Price
FDB016N04AL7 DISTI # V79:2366_17793670	ON Semiconductor	40V 1.6MOHM D2PAK-7L	8776	800:$2.1324 250:$2.8345 100:$3.0151 10:$3.5035 1:$4.5553
FDB016N04AL7 DISTI # V36:1790_06337998	ON Semiconductor	40V 1.6MOHM D2PAK-7L	0	800000:$1.9390 400000:$1.9420 80000:$2.2150 8000:$2.7060 800:$2.7890
FDB016N04AL7 DISTI # FDB016N04AL7CT-ND	ON Semiconductor	MOSFET N-CH 40V 160A D2PAK-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDB016N04AL7 DISTI # FDB016N04AL7DKR-ND	ON Semiconductor	MOSFET N-CH 40V 160A D2PAK-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDB016N04AL7 DISTI # FDB016N04AL7TR-ND	ON Semiconductor	MOSFET N-CH 40V 160A D2PAK-7 RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	Temporarily Out of Stock	800:$2.7888
FDB016N04AL7 DISTI # 30660954	ON Semiconductor	40V 1.6MOHM D2PAK-7L	8776	7:$4.5553
FDB016N04AL7 DISTI # FDB016N04AL7	ON Semiconductor	Trans MOSFET N-CH 40V 306A 7-Pin(6+Tab) D2PAK T/R - Tape and Reel (Alt: FDB016N04AL7) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	8000:$1.8900 800:$1.9900 1600:$1.9900 3200:$1.9900 4800:$1.9900
FDB016N04AL7 DISTI # FDB016N04AL7	ON Semiconductor	Trans MOSFET N-CH 40V 306A 7-Pin(6+Tab) D2PAK T/R (Alt: FDB016N04AL7) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Asia - 0	40000:$2.6229 20000:$2.6667 8000:$2.7586 4000:$2.8571 2400:$2.9630 1600:$3.0769 800:$3.2000
FDB016N04AL7 DISTI # FDB016N04AL7	ON Semiconductor	Trans MOSFET N-CH 40V 306A 7-Pin(6+Tab) D2PAK T/R - Bulk (Alt: FDB016N04AL7) Min Qty: 141 Container: Bulk	Americas - 0	1410:$2.0900 423:$2.1900 705:$2.1900 141:$2.2900 282:$2.2900
FDB016N04AL7 DISTI # FDB016N04AL7	ON Semiconductor	Trans MOSFET N-CH 40V 306A 7-Pin(6+Tab) D2PAK T/R (Alt: FDB016N04AL7) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 0	8000:€1.7900 4800:€1.8900 3200:€2.0900 1600:€2.1900 800:€2.2900
FDB016N04AL7 DISTI # 512-FDB016N04AL7	ON Semiconductor	MOSFET 40V N-Channel PowerTrench MOSFET RoHS: Compliant	800	1:$4.2300 10:$3.6000 100:$3.1200 250:$2.9600 500:$2.6500 800:$2.2400 2400:$2.1200
FDB016N04AL7	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	125	1000:$2.3400 500:$2.4700 100:$2.5700 25:$2.6800 1:$2.8800
FDB016N04AL7	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	800

Image	Part #	Description
	Mfr.#: FDB016N04AL7 OMO.#: OMO-FDB016N04AL7	MOSFET 40V N-Channel PowerTrench MOSFET
	Mfr.#: FDB0165N807L OMO.#: OMO-FDB0165N807L-ON-SEMICONDUCTOR	MOSFET N-CH 80V 310A TO263
	Mfr.#: FDB016N04AL7 OMO.#: OMO-FDB016N04AL7-ON-SEMICONDUCTOR	MOSFET N-CH 40V 160A D2PAK-7
	Mfr.#: FDB016N004AL7 OMO.#: OMO-FDB016N004AL7-1190	New and Original

FDB016N04AL7

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes