NGTB03N60R2DT4G

Mfr. #:: NGTB03N60R2DT4G
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors RC2 IGBT 3A 600V DPAK
Lifecycle:: New from this manufacturer.
Datasheet:: NGTB03N60R2DT4G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: DPAK-3

Mounting Style:: SMD/SMT

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 1.7 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 9 A

Pd - Power Dissipation:: 49 W

Maximum Operating Temperature:: + 175 C

Packaging:: Reel

Continuous Collector Current Ic Max:: 4.5 A

Brand:: ON Semiconductor

Gate-Emitter Leakage Current:: +/- 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 2500

Subcategory:: IGBTs

Unit Weight:: 0.012346 oz

Tags: NGTB0, NGTB, NGT

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We provide 90-360 days warranty.

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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB03N60R2DT4G Description

***ical: Trans IGBT Chip N-CH 600V 9A 49000mW 3-Pin(2+Tab) DPAK T/R

***el Electronic: ON SEMICONDUCTOR NGTB03N60R2DT4G IGBT Single Transistor, 9 A, 1.7 V, 49 W, 600 V, TO-252, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 9A, TO-252-3

***nell: IGBT, SINGLE, 600V, 9A, TO-252-3; DC Collector Current: 9A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 49W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 20A 72000mW 3-Pin(2+Tab) DPAK T/R

*** Electronics: ON SEMICONDUCTOR NGTB10N60R2DT4G IGBT Single Transistor, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 20A, TO-252-3

***nell: IGBT, SINGLE, 600V, 20A, TO-252-3; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 72W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 16A 56000mW 3-Pin(2+Tab) DPAK T/R

*** Electronics: ON SEMICONDUCTOR NGTB05N60R2DT4G IGBT Single Transistor, 16 A, 1.65 V, 56 W, 600 V, TO-252, 3 Pins

*** Stop Electro: Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 16A, TO-252-3

***nell: IGBT, SINGLE, 600V, 16A, TO-252-3; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 15A 56000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: N-channel 600 V, 7 A very fast IGBT

***roFlash: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA

***icroelectronics SCT: Short-circuit rugged IGBT, DPAK, Tape and Reel

***ment14 APAC: IGBT, SINGLE, 600V, 15A, TO-252-3

*** Electronic Components: IGBT Transistors PowerMESH" IGBT

***ponent Stockers USA: 15 A 600 V N-CHANNEL IGBT TO-252AA

***nell: IGBT, SINGLE, 600V, 15A, TO-252-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***ical: Trans IGBT Chip N-CH 600V 20A 62000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: 10 A, 600 V short-circuit rugged IGBT

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors N Ch 600V 10A

***ark: Ptd High Voltage Rohs Compliant: Yes

***nell: IGBT, D-PAK; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temper

***ical: Trans IGBT Chip N-CH 600V 15A 62000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: New short circuit rugged "K" series

***r Electronics: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel

***ser: Power MOSFET Transistors N Ch 55V 6.5mohm 80A Pwr MOSFET

***nell: IGBT, SINGLE, 600V, 15A, TO-252; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 62W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***ical: Trans IGBT Chip N=-CH 600V 6A 40000mW Automotive 3-Pin(2+Tab) DPAK T/R

***ure Electronics: FGD3N60LSD Series 600 V 6 A 40 W Surface Mount IGBT - D-PAK

***emi: IGBT, 600V, 3A, 1.2V, DPAK, Planar

***r Electronics: Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors 600V IGBT HID Application

***i-Key Marketplace: INSULATED GATE BIPOLAR TRANSISTO

***th Star Micro: Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature. Product Highlights: High Current Capability Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A High Input Impedance

Market price

Part #	Mfg.	Description	Stock	Price
NGTB03N60R2DT4G DISTI # V72:2272_07323134	ON Semiconductor	Trans IGBT Chip N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2447	1000:$0.3481 500:$0.3629 250:$0.4033 100:$0.4481 25:$0.6394 10:$0.7815 1:$0.9454
NGTB03N60R2DT4G DISTI # V36:1790_07323134	ON Semiconductor	Trans IGBT Chip N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0
NGTB03N60R2DT4G DISTI # NGTB03N60R2DT4GOSCT-ND	ON Semiconductor	IGBT 9A 600V DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	801In Stock	500:$0.5003 100:$0.6329 10:$0.8260 1:$0.9400
NGTB03N60R2DT4G DISTI # NGTB03N60R2DT4GOSDKR-ND	ON Semiconductor	IGBT 9A 600V DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
NGTB03N60R2DT4G DISTI # NGTB03N60R2DT4GOSTR-ND	ON Semiconductor	IGBT 9A 600V DPAK RoHS: Compliant Container: Tape & Reel (TR)	Temporarily Out of Stock
NGTB03N60R2DT4G DISTI # 33368659	ON Semiconductor	Trans IGBT Chip N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	40000	2500:$0.3072
NGTB03N60R2DT4G DISTI # 25775914	ON Semiconductor	Trans IGBT Chip N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2447	20:$0.9454
NGTB03N60R2DT4G DISTI # 45Y1414	ON Semiconductor	IGBT, SINGLE, 600V, 9A, TO-252-3,DC Collector Current:9A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:49W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes	0
NGTB03N60R2DT4G DISTI # 58Y3603	ON Semiconductor	IGBT Single Transistor, 9 A, 1.7 V, 49 W, 600 V, TO-252, 3 RoHS Compliant: Yes	0
NGTB03N60R2DT4G DISTI # 863-NGTB03N60R2DT4G	ON Semiconductor	IGBT Transistors RC2 IGBT 3A 600V DPAK RoHS: Compliant	2350	1:$0.8700 10:$0.7170 100:$0.4630 1000:$0.3710 2500:$0.3130 10000:$0.3010 25000:$0.2900
NGTB03N60R2DT4G DISTI # 8829795P	ON Semiconductor	IGBT N-CH 600V 4.5A DPAK3, RL	1860	50:£0.2190
NGTB03N60R2DT4G DISTI # 2492864	ON Semiconductor	IGBT, SINGLE, 600V, 9A, TO-252-3 RoHS: Compliant	398	500:£0.2160 250:£0.2370 100:£0.2570 25:£0.2770 5:£0.3070
NGTB03N60R2DT4G DISTI # XSKDRABS0014329	ON SEMICONDUCTOR	RoHS: Compliant	57500 in Stock0 on Order	57500:$0.2827 2500:$0.3029
NGTB03N60R2DT4G	ON Semiconductor	600V,4.5A,N-Channel IGBT	1950	1:$0.6600 100:$0.4900 500:$0.4200 1000:$0.4000
NGTB03N60R2DT4G DISTI # 2492864	ON Semiconductor	IGBT, SINGLE, 600V, 9A, TO-252-3 RoHS: Compliant	398	10000:$0.4540 2500:$0.4720 1000:$0.5590 100:$0.6980 10:$1.0800 1:$1.3100

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NGTB03N60R2DT4G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes