NGTB0

NGTB03N60R2DT4G vs NGTB05N vs NGTB05N60R2

 
PartNumberNGTB03N60R2DT4GNGTB05NNGTB05N60R2
DescriptionIGBT Transistors RC2 IGBT 3A 600V DPAK
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseDPAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.7 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C9 A--
Pd Power Dissipation49 W--
Maximum Operating Temperature+ 175 C--
PackagingReel--
Continuous Collector Current Ic Max4.5 A--
BrandON Semiconductor--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity2500--
SubcategoryIGBTs--
Unit Weight0.012346 oz--
Manufacturer Part # Description RFQ
NGTB03N60R2DT4G IGBT Transistors RC2 IGBT 3A 600V DPAK
NGTB05N60R2DT4G IGBT Transistors RC2 IGBT 5A 600V DPAK
NGTB05N New and Original
NGTB05N60R2 New and Original
ON Semiconductor
ON Semiconductor
NGTB03N60R2DT4G IGBT 9A 600V DPAK
NGTB05N60R2DT4G IGBT 5A 600V DPAK
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