FGB3040CS

Mfr. #:: FGB3040CS
Manufacturer:: ON Semiconductor / Fairchild
Description:: IGBT Transistors IGBT EcoSPARK 300mJ 400V NCh Cur Sen Ign
Lifecycle:: New from this manufacturer.
Datasheet:: FGB3040CS Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: FGB3040CS more Information

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-263-6

Mounting Style:: SMD/SMT

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Series:: FGB3040CS

Qualification:: AEC-Q101

Packaging:: Reel

Operating Temperature Range:: - 40 C to + 175 C

Brand:: ON Semiconductor / Fairchild

Product Type:: IGBT Transistors

Factory Pack Quantity:: 800

Subcategory:: IGBTs

Unit Weight:: 0.046279 oz

Tags: FGB3040C, FGB304, FGB30, FGB3, FGB

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Email: info@omo-ic.com

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Vacuum Packaging with PL

Step2:
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Step3:
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FGB3040CS Description

***emi: IGBT, 430V, 19A, 1.6V, 300mJ, D2PAK, Current Sensing EcoSPARK® I, N-Channel Ignition

***ow.cn: Trans IGBT Chip N-CH 370V 21A 150000mW Automotive 7-Pin(6+Tab) D2PAK T/R

***ure Electronics: FGB3040CS Series 430 V 21 A N-Channel Current Sensing Ignition IGBT - TO-263-6

***ark: Insulated-Gate Bibolar Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:430V; Continuous Collector Current, Ic:21A; Collector Emitter Saturation Voltage, Vce(sat):1.6V ;RoHS Compliant: Yes

***rchild Semiconductor: The FGB3040CS is an lgnition IGBT that offers outstand-ing SCIS capability along with a ratiometric emitter current sensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is provided through a fourth (sense) lead. This signal provides a current level that is proportional to the main collector to emitter current. The effective ratio as measured on the sense lead is a function of the sense output, the collector current and the gate to emitter drive voltage.

***ical: Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) TO-263

***nell: IGBT, SINGLE, 600V, 40A, TO-263; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.95V; Power Dissipation Pd: 170W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TRENCHSTOP Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: High speed 600 V, 20 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package provides the best compromise between switching and conduction losses, PG-TO263-3, RoHS

***ark: Igbt, 600V, 40A, 175Deg C, 170W; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:1.95V; Power Dissipation:170W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IGB20N60H3ATMA1

***ineon: Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications

***p One Stop Global: Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin(2+Tab) TO-263 T/R

***ineon SCT: Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies, PG-TO263-3, RoHS

***ark: Igbt, Single, 1.2Kv, 6.2A, To-263-3; Dc Collector Current:6.2A; Collector Emitter Saturation Voltage Vce(On):3.1V; Power Dissipation Pd:62W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-263; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon: Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. | Summary of Features: 30% lower E off compared to previous generation; Short circuit withstand time 10s; Designed for operation above 30kHz; High ruggedness, temperature stable behaviour; Pb-free lead plating; RoHS compliant; Qualified according to JEDEC for target applications | Target Applications: Infineon offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers, welding and SMPS segments.

***ical: Trans IGBT Chip N-CH 600V 40A 166000mW Automotive 3-Pin(2+Tab) D2PAK T/R

***ment14 APAC: IGBT+ DIODE,600V,20A,TO263; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:166W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:166W

***ineon SCT: The 600 V, 20 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO263-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***p One Stop: Trans IGBT Chip N-CH 600V 90A 333000mW 3-Pin(2+Tab) D2PAK T/R

***ineon SCT: Infineon's 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO263-3, RoHS

***ment14 APAC: IGBT,600V,50A,TO263; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2V; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:333W

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

FGB3040CS More Information

Automotive Solutions: ON Semiconductor Automotive Solutions deliver performance, fuel economy and emission levels for today's and the future's vehicles. ON Semiconductor has a 50-year legacy as a worldwide automotive semiconductor supplier with leading-edge IGBTs, MOSFETs, ignition IGBTs, injector drivers, gate drivers and power modules. These high-quality, power-efficient components are used in engine management, electric power assisted steering (EPAS), motor drives, traction inverters, chargers, DC-DC converters, PTC heaters and other systems. Learn More

Market price

Part #	Mfg.	Description	Stock	Price
FGB3040CS DISTI # V79:2366_18816026	ON Semiconductor	ES-1 SENSE-IGN-IGBT TO263	608	4800:$1.5570 2400:$1.6150 800:$1.6890 500:$1.8770 250:$2.1230 100:$2.2230 10:$2.4720 1:$2.8330
FGB3040CS DISTI # FGB3040CSCT-ND	ON Semiconductor	IGBT 430V 21A 150W TO263-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	782In Stock	100:$2.6522 10:$3.2370 1:$3.6000
FGB3040CS DISTI # FGB3040CSDKR-ND	ON Semiconductor	IGBT 430V 21A 150W TO263-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	782In Stock	100:$2.6522 10:$3.2370 1:$3.6000
FGB3040CS DISTI # FGB3040CSTR-ND	ON Semiconductor	IGBT 430V 21A 150W TO263-6 RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	Temporarily Out of Stock	2400:$1.7606 1600:$1.8487 800:$2.1920
FGB3040CS DISTI # 26122880	ON Semiconductor	ES-1 SENSE-IGN-IGBT TO263	608	500:$1.8770 250:$2.1230 100:$2.2230 10:$2.4720 4:$2.8330
FGB3040CS DISTI # FGB3040CS	ON Semiconductor	Trans IGBT Chip N-CH 370V 21A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: FGB3040CS) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	800:$1.5900 1600:$1.5900 3200:$1.5900 4800:$1.4900 8000:$1.4900
FGB3040CS DISTI # 61M2360	ON Semiconductor	Insulated-Gate Bibolar Transistor,DC Collector Current:21A,Collector Emitter Voltage Vces:430V,Power Dissipation Pd:150W,Collector Emitter Voltage V(br)ceo:430V,No. of Pins:6,Collector Emitter Saturation Voltage Vce(sat):1.6V , RoHS Compliant: Yes	0	1:$1.9300 800:$1.9200 2400:$1.7600 9600:$1.7100
FGB3040CS	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 21A I(C), 430V V(BR)CES, N-Channel RoHS: Compliant	66264	1000:$2.0600 500:$2.1700 100:$2.2600 25:$2.3500 1:$2.5300
FGB3040CS DISTI # 512-FGB3040CS	ON Semiconductor	IGBT Transistors IGBT EcoSPARK 300mJ 400V NCh Cur Sen Ign RoHS: Compliant	840	1:$3.3300 10:$2.8300 100:$2.4600 250:$2.3300 500:$2.0900 800:$1.7700 2400:$1.6800 4800:$1.6100
FGB3040CS	Fairchild Semiconductor Corporation	RoHS: Compliant	Europe - 680
FGB3040CS DISTI # C1S541901396653	ON Semiconductor	Trans IGBT Chip N-CH 370V 21A 150000mW Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	608	500:$1.8770 100:$2.2230 1:$2.8330

Image	Part #	Description
	Mfr.#: FGB30N6S2DT OMO.#: OMO-FGB30N6S2DT	Motor / Motion / Ignition Controllers & Drivers 600V N-Ch IGBT SMPS II Series
	Mfr.#: FGB3040CS OMO.#: OMO-FGB3040CS-ON-SEMICONDUCTOR	Motor / Motion / Ignition Controllers & Drivers IGBT EcoSPARK 300mJ 400V NCh Cur Sen Ign
	Mfr.#: FGB3040ET OMO.#: OMO-FGB3040ET-1190	New and Original
	Mfr.#: FGB3040G2-F085 OMO.#: OMO-FGB3040G2-F085-ON-SEMICONDUCTOR	IGBT 400V 41A TO263
	Mfr.#: FGB3056_F085 OMO.#: OMO-FGB3056-F085-1190	ECOSPARK IGNITION IGBT - Tape and Reel (Alt: FGB3056_F085)
	Mfr.#: FGB30N6S2DT OMO.#: OMO-FGB30N6S2DT-ON-SEMICONDUCTOR	IGBT 600V 45A 167W TO263AB
	Mfr.#: FGB30N6S2T OMO.#: OMO-FGB30N6S2T-ON-SEMICONDUCTOR	IGBT 600V 45A 167W TO263AB
	Mfr.#: FGB3236-F085 OMO.#: OMO-FGB3236-F085-ON-SEMICONDUCTOR	IGBT 360V 44A 187W D2PAK
	Mfr.#: FGB3245G2-F085 OMO.#: OMO-FGB3245G2-F085-ON-SEMICONDUCTOR	ECOSPARK2 450V IGNITION IGBT
	Mfr.#: FGB35N33BT OMO.#: OMO-FGB35N33BT-1190	New and Original

FGB3040CS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes